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2009 International Symposium on Next Generation Terabit Memory Technology - Seoul, Korea - 24 July 2008
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Jea-Gun | - |
| dc.date.accessioned | 2022-12-20T19:18:42Z | - |
| dc.date.available | 2022-12-20T19:18:42Z | - |
| dc.date.issued | 2010-01 | - |
| dc.identifier.issn | 1567-1739 | - |
| dc.identifier.issn | 1878-1675 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175577 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | The Korean Physical Society | - |
| dc.title | 2009 International Symposium on Next Generation Terabit Memory Technology - Seoul, Korea - 24 July 2008 | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.doi | 10.1016/j.cap.2010.02.056 | - |
| dc.identifier.scopusid | 2-s2.0-77649198271 | - |
| dc.identifier.wosid | 000278635400001 | - |
| dc.identifier.bibliographicCitation | Current Applied Physics, v.10, no.1, pp E1 - E1 | - |
| dc.citation.title | Current Applied Physics | - |
| dc.citation.volume | 10 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | E1 | - |
| dc.citation.endPage | E1 | - |
| dc.type.docType | Editorial Material | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S156717391000074X?via%3Dihub | - |
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