Dependence of current bistabilities on trap density and maximum applied voltage in organic bistable devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Jae Hun | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-12-20T19:18:52Z | - |
dc.date.available | 2022-12-20T19:18:52Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175579 | - |
dc.description.abstract | The current-voltage (I-V) curves and the captured electron density with various trap densities and maximum applied voltages of organic bistable devices (OBDs) were calculated by using the Shockley-Reed trapping rate model and taking into account the thermionic emission model. The current bistabilities in the I-V curves for OBDs were attributed to captured electrons in the traps near the heterointerface between the electrode and the organic layer. The on/off ratio and the width of the memory window of the I-V curves for OBDs gradually increased with increasing trap density in the organic layer and maximum applied voltage. The maximum increase of the on/off ratio and the width of the memory window of the I-V curve for OBDs became saturated to the specific values, regardless of the continuous increase of the trap density and the maximum applied voltage. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Dependence of current bistabilities on trap density and maximum applied voltage in organic bistable devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1016/j.cap.2009.12.010 | - |
dc.identifier.scopusid | 2-s2.0-77649234074 | - |
dc.identifier.wosid | 000278635400011 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.10, no.1, pp.E42 - E45 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 10 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | E42 | - |
dc.citation.endPage | E45 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordAuthor | Current bistability | - |
dc.subject.keywordAuthor | Trap density | - |
dc.subject.keywordAuthor | Maximum applied voltage | - |
dc.subject.keywordAuthor | Organic bistable devices | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1567173909005975?via%3Dihub | - |
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