Dependence of current bistabilities on trap density and maximum applied voltage in organic bistable devices

Abstract

The current-voltage (I-V) curves and the captured electron density with various trap densities and maximum applied voltages of organic bistable devices (OBDs) were calculated by using the Shockley-Reed trapping rate model and taking into account the thermionic emission model. The current bistabilities in the I-V curves for OBDs were attributed to captured electrons in the traps near the heterointerface between the electrode and the organic layer. The on/off ratio and the width of the memory window of the I-V curves for OBDs gradually increased with increasing trap density in the organic layer and maximum applied voltage. The maximum increase of the on/off ratio and the width of the memory window of the I-V curve for OBDs became saturated to the specific values, regardless of the continuous increase of the trap density and the maximum applied voltage.