Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) thin film
DC Field | Value | Language |
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dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Kim, Jong Yun | - |
dc.contributor.author | Yoon, Tae Hyun | - |
dc.contributor.author | Choi, Sung-Yool | - |
dc.date.accessioned | 2022-12-20T19:18:55Z | - |
dc.date.available | 2022-12-20T19:18:55Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175580 | - |
dc.description.abstract | We investigated the reversible resistive switching of poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) thin films sandwiched between Al electrodes. The J-V sweep curve showed a hysteretic behavior which depends on the polarity of the applied voltage bias. From the analysis of I-V curves, it was revealed that the charge transport through the junction was governed by the bulk space-charge-limited conduction (SCLC) model. Using transmission electron microscopy (TEM) analysis, it was confirmed that the initial high resistance state of PEDOT:PSS films is related with the segregation of PSS chains induced by redox reaction between a Al metal electrode and PEDOT:PSS film. Positive space charges present on the top region of PEDOT:PSS films can be proposed as a possible trap centers of electron trapping and detrapping process. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) thin film | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Tae Hyun | - |
dc.identifier.doi | 10.1016/j.cap.2009.12.011 | - |
dc.identifier.scopusid | 2-s2.0-77649237352 | - |
dc.identifier.wosid | 000278635400012 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.10, no.1, pp.E46 - E49 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 10 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | E46 | - |
dc.citation.endPage | E49 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | BISTABILITY | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordAuthor | PEDOT:PSS | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.subject.keywordAuthor | TEM | - |
dc.subject.keywordAuthor | EDS | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1567173909005987?via%3Dihub | - |
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