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Structural, electrical, and optical characterizations of a-plane InGaN/GaN quantum well structures
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Song, Hooyoung | - |
| dc.contributor.author | Kim, Jin Soak | - |
| dc.contributor.author | Kim, Eun Kyu | - |
| dc.contributor.author | Lee, Sung-Ho | - |
| dc.contributor.author | Kim, Jae Bum | - |
| dc.contributor.author | Son, Ji-Su | - |
| dc.contributor.author | Hwang, S.-M. | - |
| dc.date.accessioned | 2022-12-20T19:31:09Z | - |
| dc.date.available | 2022-12-20T19:31:09Z | - |
| dc.date.issued | 2009-12 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175676 | - |
| dc.format.extent | 2 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | IEEE | - |
| dc.title | Structural, electrical, and optical characterizations of a-plane InGaN/GaN quantum well structures | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/ISDRS.2009.5378317 | - |
| dc.identifier.scopusid | 2-s2.0-77949520883 | - |
| dc.identifier.bibliographicCitation | 2009 International Semiconductor Device Research Symposium, ISDRS '09, pp 1 - 2 | - |
| dc.citation.title | 2009 International Semiconductor Device Research Symposium, ISDRS '09 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 2 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/5378317/ | - |
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