Physical Properties of Co-Mn-Si Films on SOI Prepared by Using a Silicidation Process

Abstract

We have measured the structural, magnetic, and transport properties of Co-Mn-Si films prepared on SOI wafers by using two different silicidation processes: rapid thermal annealing (RTA) at 650 degrees C for 3 and 5 min. X-ray analysis revealed that the RTA at 650 degrees C for 5 min produced a single-phase Co2MnSi film while the RTA at 650 degrees C for 3 min produced a multi-phase film composed mainly of COSi2 and Co2MnSi. For the single-phase Co2MnSi films, we obtained a saturated magnetization of 4.1 mu(B)/f.u. and a residual resistivity of 8.5 mu Omega.cm at 4.2 K, which are close to the values for single-crystalline Co2MnSi. Also. the absence of low-field magnetoresistance (MR) for the single-phase film, in contrast to the hysteretic MR for the multi-phase film, suggests that our single-phase Co2MnSi film has a single-crystal-like quality.