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Statistical Analysis of Metal-Molecule Contacts in Alkyl Molecular Junctions: Sulfur versus Selenium End-Group
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yoo, Hana | - |
| dc.contributor.author | Choi, Jungseok | - |
| dc.contributor.author | Wang, Gunuk | - |
| dc.contributor.author | Kim, Tae-Wook | - |
| dc.contributor.author | Noh, Jaegeun | - |
| dc.contributor.author | Lee, Takhee | - |
| dc.date.accessioned | 2022-12-20T19:45:47Z | - |
| dc.date.available | 2022-12-20T19:45:47Z | - |
| dc.date.issued | 2009-12 | - |
| dc.identifier.issn | 1533-4880 | - |
| dc.identifier.issn | 1533-4899 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175756 | - |
| dc.description.abstract | We fabricated a large number of microscale via-hole structure molecular devices (2240 devices) using octane-Se [CH3(CH2)(7)Se] self assembled monolayers (SAMs) and compared their charge transport properties with those of octane-S [CH3(CH2)(7)S] SAMs molecular devices in terms of current density, resistance, and tunneling decay coefficient. The device yield of the "working" octane-Se molecular devices was found to be similar to 1.7% (38/2240), which was similar to the yield of similar to 1.1% (50/4480) for octane-S devices. Our statistical analysis revealed that for octane-Se devices the tunneling current was slightly smaller and the low-bias resistance and decay coefficient were slightly larger than those for octane-S devices. The standard deviations of these transport parameters of octane-Se devices were found to be broader than those for octane-S devices due to irregularity of the binding sites of octane-Se on Au electrode surface. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Scientific Publishers | - |
| dc.title | Statistical Analysis of Metal-Molecule Contacts in Alkyl Molecular Junctions: Sulfur versus Selenium End-Group | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1166/jnn.2009.1620 | - |
| dc.identifier.scopusid | 2-s2.0-70350246091 | - |
| dc.identifier.wosid | 000270987900038 | - |
| dc.identifier.bibliographicCitation | Journal of Nanoscience and Nanotechnology, v.9, no.12, pp 7012 - 7015 | - |
| dc.citation.title | Journal of Nanoscience and Nanotechnology | - |
| dc.citation.volume | 9 | - |
| dc.citation.number | 12 | - |
| dc.citation.startPage | 7012 | - |
| dc.citation.endPage | 7015 | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
| dc.subject.keywordPlus | ELECTRON-TRANSPORT | - |
| dc.subject.keywordPlus | CONDUCTANCE | - |
| dc.subject.keywordAuthor | A Molecular Electronics | - |
| dc.subject.keywordAuthor | Device Yield | - |
| dc.subject.keywordAuthor | Alkanethiols | - |
| dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2009/00000009/00000012/art00038 | - |
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