Effects of defects on the morphologies of GaN nanorods grown on Si (111) substrates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Kyu Hyung | - |
dc.contributor.author | Lee, Jeong Yong | - |
dc.contributor.author | Kwon, Young Hae | - |
dc.contributor.author | Kang, Tae Won | - |
dc.contributor.author | You, Joo Hyung | - |
dc.contributor.author | Lee, Dea Uk | - |
dc.contributor.author | Kim, Taewhan | - |
dc.date.accessioned | 2022-12-20T20:35:33Z | - |
dc.date.available | 2022-12-20T20:35:33Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-10 | - |
dc.identifier.issn | 0884-2914 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176092 | - |
dc.description.abstract | Scanning electron microscopy and transmission electron microscopy images and selected area electron diffraction pattern showed that the one-dimensional GaN nanorods with [0001]-oriented single-crystalline wurzite structures were formed on Si (111) substrates by using hydride vapor-phase epitaxy without a catalyst. Although some stacking faults and inversion domain boundaries existed in the GaN nanorods, few other defects such as threading dislocations were observed. The fort-nation of the facet plane in the N-polar region of the GaN nanorod containing an inversion domain boundary originated from the slow growth rate, followed by the lateral adatom diffusion from the Ga-polar region to reduce the length difference. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER HEIDELBERG | - |
dc.title | Effects of defects on the morphologies of GaN nanorods grown on Si (111) substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Taewhan | - |
dc.identifier.doi | 10.1557/JMR.2009.0391 | - |
dc.identifier.scopusid | 2-s2.0-70350462978 | - |
dc.identifier.wosid | 000270500100004 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS RESEARCH, v.24, no.10, pp.3032 - 3037 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS RESEARCH | - |
dc.citation.title | JOURNAL OF MATERIALS RESEARCH | - |
dc.citation.volume | 24 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 3032 | - |
dc.citation.endPage | 3037 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | GALLIUM NITRIDE | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | DISLOCATIONS | - |
dc.subject.keywordPlus | MULTICOLOR | - |
dc.subject.keywordPlus | SI(111) | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | LAYERS | - |
dc.identifier.url | https://link.springer.com/article/10.1557/jmr.2009.0391 | - |
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