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Charging Effect of WSi2 Nano-particles Embedded in SiO2 Layers

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dc.contributor.authorSeo, Ki Bong-
dc.contributor.authorLee, Dong Uk-
dc.contributor.authorLee, Tae Hee-
dc.contributor.authorKim, Eun Kyu-
dc.date.accessioned2022-12-20T21:01:43Z-
dc.date.available2022-12-20T21:01:43Z-
dc.date.created2022-08-26-
dc.date.issued2009-09-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176271-
dc.description.abstractA nano-floating gate capacitor with WSi2 nano-particles embedded in a SiO2 layer was fabricated. The WSi2 nano-particles were formed from a thin WSi2 layer during a rapid thermal annealing process, and they had a spherical shape with all average diameter of 2.5 nm. The electrical properties of the nano-floating gate capacitor with WSi2 nano-particles embedded in SiO2 dielectrics Were characterized by using capacitance-voltage measurements. Then, a flat-band voltage shift of up to 3.8 V due to carrier charging of the WSi2 nano-particles appeared when the gate voltage was swept front -7 V to +7 V and from +7 V to -7 V, which showed that; the WSi2 nano-particles could be applied to nonvolatile memory devices.-
dc.language영어-
dc.language.isoen-
dc.publisherKOREAN PHYSICAL SOC-
dc.titleCharging Effect of WSi2 Nano-particles Embedded in SiO2 Layers-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Eun Kyu-
dc.identifier.doi10.3938/jkps.55.1201-
dc.identifier.scopusid2-s2.0-70350279318-
dc.identifier.wosid000269886800001-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.3, pp.1201 - 1204-
dc.relation.isPartOfJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume55-
dc.citation.number3-
dc.citation.startPage1201-
dc.citation.endPage1204-
dc.type.rimsART-
dc.type.docTypeArticle; Proceedings Paper-
dc.identifier.kciidART001497661-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.subject.keywordPlusNONVOLATILE MEMORY APPLICATION-
dc.subject.keywordPlusELECTRICAL CHARACTERIZATION-
dc.subject.keywordPlusNANOCRYSTALS-
dc.subject.keywordAuthorWSi2-
dc.subject.keywordAuthorNano-particles-
dc.subject.keywordAuthorNano-floating gate memory-
dc.subject.keywordAuthorCarrier charging effect-
dc.identifier.urlhttps://www.jkps.or.kr/journal/view.html?uid=11145&vmd=Full-
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