Charging Effect of WSi2 Nano-particles Embedded in SiO2 Layers
DC Field | Value | Language |
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dc.contributor.author | Seo, Ki Bong | - |
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Lee, Tae Hee | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.date.accessioned | 2022-12-20T21:01:43Z | - |
dc.date.available | 2022-12-20T21:01:43Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-09 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176271 | - |
dc.description.abstract | A nano-floating gate capacitor with WSi2 nano-particles embedded in a SiO2 layer was fabricated. The WSi2 nano-particles were formed from a thin WSi2 layer during a rapid thermal annealing process, and they had a spherical shape with all average diameter of 2.5 nm. The electrical properties of the nano-floating gate capacitor with WSi2 nano-particles embedded in SiO2 dielectrics Were characterized by using capacitance-voltage measurements. Then, a flat-band voltage shift of up to 3.8 V due to carrier charging of the WSi2 nano-particles appeared when the gate voltage was swept front -7 V to +7 V and from +7 V to -7 V, which showed that; the WSi2 nano-particles could be applied to nonvolatile memory devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Charging Effect of WSi2 Nano-particles Embedded in SiO2 Layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.3938/jkps.55.1201 | - |
dc.identifier.scopusid | 2-s2.0-70350279318 | - |
dc.identifier.wosid | 000269886800001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.3, pp.1201 - 1204 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 55 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1201 | - |
dc.citation.endPage | 1204 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001497661 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY APPLICATION | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERIZATION | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordAuthor | WSi2 | - |
dc.subject.keywordAuthor | Nano-particles | - |
dc.subject.keywordAuthor | Nano-floating gate memory | - |
dc.subject.keywordAuthor | Carrier charging effect | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?uid=11145&vmd=Full | - |
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