Microstructural properties and formation mechanisms of GaN nanorods grown on Al2O3 (0001) substrates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Kyu Hyung | - |
dc.contributor.author | Lee, Jeong Yong | - |
dc.contributor.author | Kwon, Young Hae | - |
dc.contributor.author | Kang, Tae Won | - |
dc.contributor.author | Kim, Dong Hun | - |
dc.contributor.author | Lee, Dea Uk | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-12-20T21:24:56Z | - |
dc.date.available | 2022-12-20T21:24:56Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-08 | - |
dc.identifier.issn | 0884-2914 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176401 | - |
dc.description.abstract | X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy images showed that one-dimensional GaN nanorods with [0001]-oriented single-crystal line wurtzite structures were grown on Al2O3 (0001) substrates by hydride vapor-phase epitaxy without a catalyst. The tip morphology of the GaN nanorods became flat with increasing temperature difference between the gas mixing and the substrate zones. The gas mixing temperature significantly affected the formation of the nanorods, and the substrate temperature influenced the morphology and the strain of the GaN nanorods near the GaN/Al2O3 heterointerface. The strain and the stress existing in the GaN layer near the heterointerface were decreased with increasing growth rate. The formation mechanisms of the GaN nanorods grown on the Al2O3 (0001) substrates are described on the basis of the experimental results. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER HEIDELBERG | - |
dc.title | Microstructural properties and formation mechanisms of GaN nanorods grown on Al2O3 (0001) substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1557/JMR.2009.0298 | - |
dc.identifier.scopusid | 2-s2.0-70049096073 | - |
dc.identifier.wosid | 000268829300003 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS RESEARCH, v.24, no.8, pp.2476 - 2482 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS RESEARCH | - |
dc.citation.title | JOURNAL OF MATERIALS RESEARCH | - |
dc.citation.volume | 24 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 2476 | - |
dc.citation.endPage | 2482 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | SEMICONDUCTOR NANOWIRES | - |
dc.subject.keywordPlus | NANOTUBES | - |
dc.identifier.url | https://link.springer.com/article/10.1557/jmr.2009.0298 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.