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Hierarchical Use of Heterogeneous Flash Memories for High Performance and Durability

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dc.contributor.authorJung, Sanghyuk-
dc.contributor.authorSong, Yong Ho-
dc.date.accessioned2022-12-20T21:26:27Z-
dc.date.available2022-12-20T21:26:27Z-
dc.date.issued2009-08-
dc.identifier.issn0098-3063-
dc.identifier.issn1558-4127-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176416-
dc.description.abstractThe use of NAND flash memory for building permanent storage has been increasing in many embedded systems due to idiosyncrasies such as non-volatility and low energy consumption. The persistent requirements for high storage capacity have given rise to the increase of bit density per cell as in multi-level cells but this has come at the expense of performance and has resulted in degradation of durability. In this paper, we introduce a complementary approach to boost the performance and durability of MLC-based storage systems by employing a non-volatile buffer that temporarily holds the data heading to MLCs. We also propose algorithms 10 efficiently eliminate unnecessary write and erase operations in MLCs by performing a pre-merge in the buffer. Our experiments show that the proposed approach can decrease average response time by up to 4 times and increase durability by 4 times by adding only a small hardware cost.-
dc.format.extent9-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleHierarchical Use of Heterogeneous Flash Memories for High Performance and Durability-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/TCE.2009.5278004-
dc.identifier.scopusid2-s2.0-70350292689-
dc.identifier.wosid000270358500061-
dc.identifier.bibliographicCitationIEEE Transactions on Consumer Electronics, v.55, no.3, pp 1383 - 1391-
dc.citation.titleIEEE Transactions on Consumer Electronics-
dc.citation.volume55-
dc.citation.number3-
dc.citation.startPage1383-
dc.citation.endPage1391-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaTelecommunications-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryTelecommunications-
dc.subject.keywordPlusPOLICY-
dc.subject.keywordAuthorNAND flash memory-
dc.subject.keywordAuthorflash translation layer-
dc.subject.keywordAuthorembedded storage-
dc.subject.keywordAuthorhybrid SSD-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/5278004/-
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