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Hierarchical Use of Heterogeneous Flash Memories for High Performance and Durability
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jung, Sanghyuk | - |
| dc.contributor.author | Song, Yong Ho | - |
| dc.date.accessioned | 2022-12-20T21:26:27Z | - |
| dc.date.available | 2022-12-20T21:26:27Z | - |
| dc.date.issued | 2009-08 | - |
| dc.identifier.issn | 0098-3063 | - |
| dc.identifier.issn | 1558-4127 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176416 | - |
| dc.description.abstract | The use of NAND flash memory for building permanent storage has been increasing in many embedded systems due to idiosyncrasies such as non-volatility and low energy consumption. The persistent requirements for high storage capacity have given rise to the increase of bit density per cell as in multi-level cells but this has come at the expense of performance and has resulted in degradation of durability. In this paper, we introduce a complementary approach to boost the performance and durability of MLC-based storage systems by employing a non-volatile buffer that temporarily holds the data heading to MLCs. We also propose algorithms 10 efficiently eliminate unnecessary write and erase operations in MLCs by performing a pre-merge in the buffer. Our experiments show that the proposed approach can decrease average response time by up to 4 times and increase durability by 4 times by adding only a small hardware cost. | - |
| dc.format.extent | 9 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers | - |
| dc.title | Hierarchical Use of Heterogeneous Flash Memories for High Performance and Durability | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/TCE.2009.5278004 | - |
| dc.identifier.scopusid | 2-s2.0-70350292689 | - |
| dc.identifier.wosid | 000270358500061 | - |
| dc.identifier.bibliographicCitation | IEEE Transactions on Consumer Electronics, v.55, no.3, pp 1383 - 1391 | - |
| dc.citation.title | IEEE Transactions on Consumer Electronics | - |
| dc.citation.volume | 55 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 1383 | - |
| dc.citation.endPage | 1391 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Telecommunications | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Telecommunications | - |
| dc.subject.keywordPlus | POLICY | - |
| dc.subject.keywordAuthor | NAND flash memory | - |
| dc.subject.keywordAuthor | flash translation layer | - |
| dc.subject.keywordAuthor | embedded storage | - |
| dc.subject.keywordAuthor | hybrid SSD | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/5278004/ | - |
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