Electrical bistabilities and memory stabilities of nonvolatile bistable devices fabricated utilizing C-60 molecules embedded in a polymethyl methacrylate layer
- Authors
- Cho, Sung Hwan; Lee, Dong Ik; Jung, Jae Hun; Kim, Tae Whan
- Issue Date
- Aug-2009
- Publisher
- IOP PUBLISHING LTD
- Citation
- NANOTECHNOLOGY, v.20, no.34, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 20
- Number
- 34
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176452
- DOI
- 10.1088/0957-4484/20/34/345204
- ISSN
- 0957-4484
- Abstract
- Current-voltage (I-V) measurements on Al/fullerene (C-60) molecules embedded in polymethyl methacrylate/Al devices at 300 K showed a current bistability due to the existence of the C-60 molecules. The on/off ratio of the current bistability for the memory devices was as large as 10(3). The retention time of the devices was above 2.5 x 10(4) s at room temperature, and cycling endurance tests on these devices indicated that the ON and OFF currents showed no degradation until 50 000 cycles. Carrier transport mechanisms for the nonvolatile bistable devices are described on the basis of the I-V experimental and fitting results.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.