Electrical property of nonvolatile memory with SiC nano-particles formed in SiO2
DC Field | Value | Language |
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dc.contributor.author | Lee, Tae Hee | - |
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Shin, Jin-Wook | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.date.accessioned | 2022-12-20T21:37:45Z | - |
dc.date.available | 2022-12-20T21:37:45Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-07 | - |
dc.identifier.issn | 0749-6036 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176524 | - |
dc.description.abstract | Nonvolatile memory device with SiC nano-particles formed in SiO2 was fabricated and its electrical properties were evaluated. The SiC and SiO2 thin layer were deposited by radio-frequency magnetron sputtering in the argon gas ambient. The SiC nanoparticles were formed after post thermal annealing at 900 degrees C for 3 min, and then their average size appeared at about 10 nm and was distributed between tunnel oxide and control oxide layers. The flat-band voltage shift in a gate capacitor structure with SiC nanoparticles appeared at about 5.1 V when the induced gate voltage was swept from +/-14 V. Also, the memory window of nonvolatile memory devices to define write and erase conditions were about 2.7 V during the operations at +/-12 V for 1 s. According to these write and erase conditions, it was maintained at about 1.2 V after 10(4) s at the charge-retention characteristics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | - |
dc.title | Electrical property of nonvolatile memory with SiC nano-particles formed in SiO2 | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1016/j.spmi.2008.12.018 | - |
dc.identifier.scopusid | 2-s2.0-67249083766 | - |
dc.identifier.wosid | 000267444900033 | - |
dc.identifier.bibliographicCitation | SUPERLATTICES AND MICROSTRUCTURES, v.46, no.1-2, pp.182 - 187 | - |
dc.relation.isPartOf | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.title | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.volume | 46 | - |
dc.citation.number | 1-2 | - |
dc.citation.startPage | 182 | - |
dc.citation.endPage | 187 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FLOATING-GATE MEMORY | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | Nonvolatile memory | - |
dc.subject.keywordAuthor | SiC | - |
dc.subject.keywordAuthor | Nano-particles | - |
dc.subject.keywordAuthor | Nano-floating gate memory | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0749603608003042?via%3Dihub | - |
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