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Adsorbate-induced buckling switch of Si dimers in dissociated phenylamine on Si(001)
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Jun-Ho | - |
| dc.contributor.author | Cho, Jun-Hyung | - |
| dc.date.accessioned | 2022-12-20T21:38:33Z | - |
| dc.date.available | 2022-12-20T21:38:33Z | - |
| dc.date.issued | 2009-07 | - |
| dc.identifier.issn | 1098-0121 | - |
| dc.identifier.issn | 1550-235X | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176531 | - |
| dc.description.abstract | Using first-principles density-functional calculations, we investigate the adsorption structures of phenylamine, NH2(C6H5), on the Si(001) surface. We find that the N atom initially bonds to the down Si atom of the buckled dimer and subsequently, adsorbed NH2(C6H5) dissociates into NH(C6H5) and H species. Unlike the case of ammonia where the buckling of Si dimers remains unchanged through ammonia dissociation, we find that the N-H dissociation in adsorbed phenylamine gives rise to the buckling switch of the neighboring Si dimers, thereby inducing a charge polarization in neighboring dimers such that the electrophilic (down-buckled) and nucleophilic (up-buckled) sides are oriented adjacent to the Si-NH(C6H5) and Si-H moieties, respectively. This adsorbate-induced buckling switch in dissociated phenylamine is caused by a greater electronegativity of the phenyl group compared to the H atom in dissociated ammonia. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Physical Society | - |
| dc.title | Adsorbate-induced buckling switch of Si dimers in dissociated phenylamine on Si(001) | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1103/PhysRevB.80.033305 | - |
| dc.identifier.scopusid | 2-s2.0-69549126384 | - |
| dc.identifier.wosid | 000268617800019 | - |
| dc.identifier.bibliographicCitation | Physical Review B - Condensed Matter and Materials Physics, v.80, no.3, pp 1 - 4 | - |
| dc.citation.title | Physical Review B - Condensed Matter and Materials Physics | - |
| dc.citation.volume | 80 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 4 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | SEMICONDUCTOR SURFACES | - |
| dc.subject.keywordPlus | SELF-CONSISTENT | - |
| dc.subject.keywordPlus | ADSORPTION | - |
| dc.subject.keywordPlus | PSEUDOPOTENTIALS | - |
| dc.subject.keywordPlus | SI(100) | - |
| dc.subject.keywordPlus | NH3 | - |
| dc.subject.keywordPlus | ANILINE | - |
| dc.subject.keywordPlus | SILICON | - |
| dc.identifier.url | https://journals.aps.org/prb/abstract/10.1103/PhysRevB.80.033305 | - |
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