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Adsorbate-induced buckling switch of Si dimers in dissociated phenylamine on Si(001)

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dc.contributor.authorLee, Jun-Ho-
dc.contributor.authorCho, Jun-Hyung-
dc.date.accessioned2022-12-20T21:38:33Z-
dc.date.available2022-12-20T21:38:33Z-
dc.date.issued2009-07-
dc.identifier.issn1098-0121-
dc.identifier.issn1550-235X-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176531-
dc.description.abstractUsing first-principles density-functional calculations, we investigate the adsorption structures of phenylamine, NH2(C6H5), on the Si(001) surface. We find that the N atom initially bonds to the down Si atom of the buckled dimer and subsequently, adsorbed NH2(C6H5) dissociates into NH(C6H5) and H species. Unlike the case of ammonia where the buckling of Si dimers remains unchanged through ammonia dissociation, we find that the N-H dissociation in adsorbed phenylamine gives rise to the buckling switch of the neighboring Si dimers, thereby inducing a charge polarization in neighboring dimers such that the electrophilic (down-buckled) and nucleophilic (up-buckled) sides are oriented adjacent to the Si-NH(C6H5) and Si-H moieties, respectively. This adsorbate-induced buckling switch in dissociated phenylamine is caused by a greater electronegativity of the phenyl group compared to the H atom in dissociated ammonia.-
dc.format.extent4-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Physical Society-
dc.titleAdsorbate-induced buckling switch of Si dimers in dissociated phenylamine on Si(001)-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1103/PhysRevB.80.033305-
dc.identifier.scopusid2-s2.0-69549126384-
dc.identifier.wosid000268617800019-
dc.identifier.bibliographicCitationPhysical Review B - Condensed Matter and Materials Physics, v.80, no.3, pp 1 - 4-
dc.citation.titlePhysical Review B - Condensed Matter and Materials Physics-
dc.citation.volume80-
dc.citation.number3-
dc.citation.startPage1-
dc.citation.endPage4-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusSEMICONDUCTOR SURFACES-
dc.subject.keywordPlusSELF-CONSISTENT-
dc.subject.keywordPlusADSORPTION-
dc.subject.keywordPlusPSEUDOPOTENTIALS-
dc.subject.keywordPlusSI(100)-
dc.subject.keywordPlusNH3-
dc.subject.keywordPlusANILINE-
dc.subject.keywordPlusSILICON-
dc.identifier.urlhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.80.033305-
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