Carrier transport mechanisms in nonvolatile memory devices fabricated utilizing multiwalled carbon nanotubes embedded in a poly-4-vinyl-phenol layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Won Tae | - |
dc.contributor.author | Jung, Jae Hun | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-12-20T21:45:25Z | - |
dc.date.available | 2022-12-20T21:45:25Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-07 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176588 | - |
dc.description.abstract | Transmission electron microscopy images showed that multiwalled carbon nanotubes (MWCNTs) were dispersed in a poly-4-vinyl-phenol (PVP) layer. Capacitance-voltage (C-V) measurements on the Al/MWCNTs embedded in a PVP layer/p-Si (100) devices at 300 K showed a clockwise hysteresis with a large flatband voltage shift due to the existence of the MWCNTs. The magnitude of the flatband voltage shift in the C-V curve for the devices increased with increasing MWCNT concentration. The carrier transport mechanisms for the writing and the erasing processes for the Al/MWCNTs embedded in PVP/p-Si devices are described on the basis of the C-V results. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AIP Publishing | - |
dc.title | Carrier transport mechanisms in nonvolatile memory devices fabricated utilizing multiwalled carbon nanotubes embedded in a poly-4-vinyl-phenol layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1063/1.3174913 | - |
dc.identifier.scopusid | 2-s2.0-67650770299 | - |
dc.identifier.wosid | 000268089200032 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.95, no.2, pp.1 - 3 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 95 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRICAL BISTABILITY | - |
dc.subject.keywordAuthor | aluminium | - |
dc.subject.keywordAuthor | carbon nanotubes | - |
dc.subject.keywordAuthor | carrier mobility | - |
dc.subject.keywordAuthor | nanocomposites | - |
dc.subject.keywordAuthor | organic-inorganic hybrid materials | - |
dc.subject.keywordAuthor | random-access storage | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | transmission electron microscopy | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3174913 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.