Multi-layered SiC nanocrystals embedded in SiO2 layer for nonvolatile memory application
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Lee, Tae Hee | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Shin, Jin-Wook | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.date.accessioned | 2022-12-20T22:33:48Z | - |
dc.date.available | 2022-12-20T22:33:48Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2009-04 | - |
dc.identifier.issn | 0272-9172 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176948 | - |
dc.description.abstract | A nonvolatile memory device with the multi-layered SiC nanocrystals embedded in the SiO2 dielectrics for long-term data storage was fabricated and its electrical properties were evaluated. The multi-layered SiC nanocrystals were formed by using post thermal annealing process. The transmission electron microscope analysis showed that the multi-layered SiC nanocrystals are created between the tunnel and the control oxide layers. The average size and density of the SiC nanocrystals were approximately 5 nm and 2x1012 cm-2, respectively. The memory window of nonvolatile memory devices with the multi-layered of SiC nanocrystals was about 2.7 V, and then it was maintained around 1.1 V after 105 sec. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.title | Multi-layered SiC nanocrystals embedded in SiO2 layer for nonvolatile memory application | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Tae Hee | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1557/PROC-1160-H04-01 | - |
dc.identifier.scopusid | 2-s2.0-77649094370 | - |
dc.identifier.bibliographicCitation | Materials Research Society Symposium Proceedings, v.1160, pp.43 - 48 | - |
dc.relation.isPartOf | Materials Research Society Symposium Proceedings | - |
dc.citation.title | Materials Research Society Symposium Proceedings | - |
dc.citation.volume | 1160 | - |
dc.citation.startPage | 43 | - |
dc.citation.endPage | 48 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Average size | - |
dc.subject.keywordPlus | Data storage | - |
dc.subject.keywordPlus | Electrical property | - |
dc.subject.keywordPlus | Memory window | - |
dc.subject.keywordPlus | Multi-layered | - |
dc.subject.keywordPlus | Non-volatile memory application | - |
dc.subject.keywordPlus | Nonvolatile memory devices | - |
dc.subject.keywordPlus | Oxide layer | - |
dc.subject.keywordPlus | Post-thermal annealing | - |
dc.subject.keywordPlus | Transmission electron microscope | - |
dc.subject.keywordPlus | Electric properties | - |
dc.subject.keywordPlus | Electron microscopes | - |
dc.subject.keywordPlus | Nonvolatile storage | - |
dc.subject.keywordPlus | Silicon carbide | - |
dc.subject.keywordPlus | Transmission electron microscopy | - |
dc.subject.keywordPlus | Nanocrystals | - |
dc.identifier.url | https://link.springer.com/article/10.1557/PROC-1160-H04-01 | - |
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