Constraints of the Corning on Plugs of W Film in W Chemical Mechanical Planarization
DC Field | Value | Language |
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dc.contributor.author | Kim, Ye-Hwan | - |
dc.contributor.author | Hong, Gisik | - |
dc.contributor.author | Kim, Jong-Woo | - |
dc.contributor.author | Kim, Sang-Kyun | - |
dc.contributor.author | Kim, Namsoo | - |
dc.contributor.author | Yi, Dong Kee | - |
dc.contributor.author | Paik, Ungyu | - |
dc.date.accessioned | 2022-12-20T22:35:41Z | - |
dc.date.available | 2022-12-20T22:35:41Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-04 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176962 | - |
dc.description.abstract | The constraints of corning on the W plug in W chemical mechanical planarization (CMP) were investigated by controlling the corrosion behavior and static etch rate of the W film. Poly(acrylic amide) (PAM) was used as an inhibitor to decrease the static etch rate of the W film. The interaction between PAM and the surface of the W film was determined by potentiostatic measurement using a potentiometer and by force measurement using an atomic force microscope (AFM). AFM results revealed that the adlayer of PAM formed on the W film, which prevented the oxidation of the W film. Consequently the addition of PAM suppressed the corning defect on the W plug in a W CMP test that used patterned wafers. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Constraints of the Corning on Plugs of W Film in W Chemical Mechanical Planarization | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Paik, Ungyu | - |
dc.identifier.doi | 10.1149/1.3109981 | - |
dc.identifier.scopusid | 2-s2.0-64549154917 | - |
dc.identifier.wosid | 000265085000019 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.6, pp.H218 - H221 | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | H218 | - |
dc.citation.endPage | H221 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | TUNGSTEN | - |
dc.subject.keywordAuthor | adsorbed layers | - |
dc.subject.keywordAuthor | chemical mechanical polishing | - |
dc.subject.keywordAuthor | chemisorbed layers | - |
dc.subject.keywordAuthor | corrosion inhibitors | - |
dc.subject.keywordAuthor | etching | - |
dc.subject.keywordAuthor | metallic thin films | - |
dc.subject.keywordAuthor | passivation | - |
dc.subject.keywordAuthor | planarisation | - |
dc.subject.keywordAuthor | polymers | - |
dc.subject.keywordAuthor | tungsten | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3109981 | - |
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