Fabrication and characterization of a Cu seed layer on a 60-nm trench-patterned SiO2 substrate by a self-assembled-monolayer (SAM) process
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Won-Kyu | - |
dc.contributor.author | Hwang, Gil-Ho | - |
dc.contributor.author | Hong, Seok-Jun | - |
dc.contributor.author | Yoon, Chong-Seung | - |
dc.contributor.author | Park, Joon-Shik | - |
dc.contributor.author | Cho, Jin-Ki | - |
dc.contributor.author | Kang, Sung-Goon | - |
dc.date.accessioned | 2022-12-20T22:49:02Z | - |
dc.date.available | 2022-12-20T22:49:02Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-04 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177025 | - |
dc.description.abstract | Continuous electroless deposition of a 10-nm thick layer of Cu was successfully performed on a SiO2/Si substrate coated with a 3-nm Au catalytic layer. The Au catalytic layer was formed by a self-assembled monolayer (SAM) process terminated with NH2 headgroups, upon which negatively charged Au particles were deposited via electrostatic interaction with the positively charged NH2-SAM. The Au and NH2-SAM layers were analyzed by X-ray photoelectron spectroscopy (XPS) and contact angle analysis. Atomic force microscopy, field emission scanning electron microscopy, and XPS revealed that the Cu layer formed by this electroless processes had good step-coverage, small grain size, and excellent adhesion to the substrate. The proposed process is a very promising method for fabrication of a conductive Cu seed layer in a 60-nm trench-pattern. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Fabrication and characterization of a Cu seed layer on a 60-nm trench-patterned SiO2 substrate by a self-assembled-monolayer (SAM) process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Chong-Seung | - |
dc.identifier.doi | 10.1016/j.apsusc.2009.01.037 | - |
dc.identifier.scopusid | 2-s2.0-62649125158 | - |
dc.identifier.wosid | 000264408000006 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.255, no.12, pp.6082 - 6086 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 255 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 6082 | - |
dc.citation.endPage | 6086 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | IONIZED CLUSTER BEAM | - |
dc.subject.keywordPlus | ELECTROLESS COPPER | - |
dc.subject.keywordPlus | FILM PROPERTIES | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | PD | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordAuthor | Electroplating | - |
dc.subject.keywordAuthor | Self-assembled monolayer | - |
dc.subject.keywordAuthor | Copper seed layer | - |
dc.subject.keywordAuthor | 60-nm trench pattern | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433209000609?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.