Interband transition energies and carrier distributions of CdxZn1-xTe/ZnTe quantum wires
DC Field | Value | Language |
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dc.contributor.author | You, Joo Hyung | - |
dc.contributor.author | Woo, Jun Taek | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Yoo, Keon Ho | - |
dc.contributor.author | Lee, Hong Seok | - |
dc.contributor.author | Park, Hong Lee | - |
dc.date.accessioned | 2022-12-20T23:13:40Z | - |
dc.date.available | 2022-12-20T23:13:40Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-03 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177196 | - |
dc.description.abstract | Interband transition energies and carrier distributions of the CdxZn1-xTe/ZnTe quantum wires (QWRs) were calculated by using a finite-difference method (FDM) taking into account shape-based strain effects. The shape of the CdxZn1-xTe/ZnTe QWRs was modeled to be approximately a half-ellipsoidal cylinder on the basis of the atomic force microscopy image. The excitonic peak energies corresponding to the ground electronic subband and the ground heavy-hole band (E-1-HH1) at several temperatures, as determined from the FDM calculations taking into account strain effects, were in qualitatively reasonable agreement with those corresponding to the (E-1-HH1) excitonic transition, as determined from the temperature-dependent photoluminescence spectra. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AIP Publishing | - |
dc.title | Interband transition energies and carrier distributions of CdxZn1-xTe/ZnTe quantum wires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1063/1.3087785 | - |
dc.identifier.scopusid | 2-s2.0-63749131466 | - |
dc.identifier.wosid | 000264774000083 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.105, no.6, pp.1 - 5 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 105 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | ZNTE BARRIERS | - |
dc.subject.keywordPlus | DOTS | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordAuthor | atomic force microscopy | - |
dc.subject.keywordAuthor | cadmium compounds | - |
dc.subject.keywordAuthor | deformation | - |
dc.subject.keywordAuthor | excitons | - |
dc.subject.keywordAuthor | finite difference methods | - |
dc.subject.keywordAuthor | ground states | - |
dc.subject.keywordAuthor | II-VI semiconductors | - |
dc.subject.keywordAuthor | photoluminescence | - |
dc.subject.keywordAuthor | semiconductor quantum wires | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | zinc compounds | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3087785 | - |
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