Study of magnetic impurity as defects in ZnO grown by pulsed laser deposition

Abstract

The structural, electrical and magnetic properties of Zn0.95Mn0.O-05 films grown by a pulsed laser deposition system were studied. An X-ray diffraction was tried to verify a crystal structure of the sample. A capacitance-voltage measurement showed that the Zn0.95Mn0.O-05 has electrical properties of an n-type semiconductor, and its carrier concentration appears 5 x 10(18) cm(-3). From a deep level transient spectroscopy measurement, an oxygen vacancy and a Mn-related electron trap in the Zn0.95Mn0.05O films were appeared as E-c-0.62 eV and E-c-0.13 eV, respectively. A magnetic hysteresis of ferromagnetic was measured in the Zn0.95Mn0.O-05 at temperature of 15 K. The hydrogen plasma-annealed sample had larger magnetization than non-annealed sample because of interstitially located hydrogen atoms-mediated double exchange interaction.