Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (111) substrates by using hydride vapor-phase epitaxy
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Ki-Hyoung | - |
dc.contributor.author | Lee, Jeong Yong | - |
dc.contributor.author | Kwon, Yang Hae | - |
dc.contributor.author | Ryu, Sung Yoon | - |
dc.contributor.author | Kang, Tae Won | - |
dc.contributor.author | Yoo, Chan-Ho | - |
dc.contributor.author | Lee, Dea Uk | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-12-20T23:48:56Z | - |
dc.date.available | 2022-12-20T23:48:56Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-01 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177405 | - |
dc.description.abstract | X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy (TEM) images showed that one-dimensional GaN nanorods grown on Si (111) substarates by using hydride vapor phase epitaxy had crystalline wurzite structures and were preferentially oriented along the [0 0 0 1] direction. The high-resolution TEM (HRTEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of {(1) over bar1 0 0}, {(1) over bar1 0 2}, and {(1) over bar 1 0 3} planes. The structural properties of the GaN nanorods were significantly affected by the gas-mixing and the substrate temperatures in the final growth zone. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (111) substrates by using hydride vapor-phase epitaxy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2008.11.031 | - |
dc.identifier.scopusid | 2-s2.0-58749089445 | - |
dc.identifier.wosid | 000263700300005 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.311, no.2, pp.244 - 248 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 311 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 244 | - |
dc.citation.endPage | 248 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordAuthor | Nanostructures | - |
dc.subject.keywordAuthor | Hydride vapor phase epitaxy | - |
dc.subject.keywordAuthor | Nanomaterials | - |
dc.subject.keywordAuthor | Semiconducting III-V materials | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0022024808012554?via%3Dihub | - |
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