Dual Gate ZnO-Based Thin-Film Transistors Operating at 5 V: NOR Gate Application

Abstract

We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20-nm-thick Al2O3 for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at 200 degrees C. As characterized with single gate (SG), DG, and ground plane (GP) modes, our ZnO TFTs are well operated under 5 V. DG-mode TFT showed a field mobility of 0.38 cm(2)/V.s, a high saturation current of 6 mu A, and an on/off current ratio of similar to 10(6), while SG- and GP-mode TFTs showed a similar value of mobility but with lower current. Using DG and GP modes, NOR gate operation was well demonstrated.