Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
DC Field | Value | Language |
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dc.contributor.author | Kim, Honggyu | - |
dc.contributor.author | Woo, Sanghyun | - |
dc.contributor.author | Kim, Hyungchul | - |
dc.contributor.author | Bang, Seokhwan | - |
dc.contributor.author | Kim, Yongchan | - |
dc.contributor.author | Choi, Daesik | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2022-12-20T23:50:31Z | - |
dc.date.available | 2022-12-20T23:50:31Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-01 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177418 | - |
dc.description.abstract | Pt nanocrystals using HfO2 as tunneling and control layers were investigated for nonvolatile memory application. A Pt layer was deposited by electron-beam evaporation and transformed into well-separated nanocrystals by rapid thermal annealing at 700 degrees C. The fabricated Pt nanocrystals had a density of 2.1x10(12) cm(-2) and an average size of 3.7 nm. The capacitance-voltage measurements demonstrate that the nonvolatile memory with Pt nanocrystals had a memory effect with similar to 0.9 V flatband voltage shift under a gate voltage of 5 V. The device showed a competitive retention characteristic with a charge loss rate of 20% after 10(4) s. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1149/1.3067834 | - |
dc.identifier.scopusid | 2-s2.0-60449104965 | - |
dc.identifier.wosid | 000263518300019 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.4, pp.H92 - H94 | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | H92 | - |
dc.citation.endPage | H94 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | Data storage equipment | - |
dc.subject.keywordPlus | Electrodeposition | - |
dc.subject.keywordPlus | Hafnium compounds | - |
dc.subject.keywordPlus | Nanocrystalline alloys | - |
dc.subject.keywordPlus | Platinum | - |
dc.subject.keywordPlus | Rapid thermal annealing | - |
dc.subject.keywordPlus | Rapid thermal processing | - |
dc.subject.keywordPlus | Thermal evaporation | - |
dc.subject.keywordPlus | Nanocrystals | - |
dc.subject.keywordPlus | A densities | - |
dc.subject.keywordPlus | Atomic-layer-deposited | - |
dc.subject.keywordPlus | Average sizes | - |
dc.subject.keywordPlus | Capacitance-voltage measurements | - |
dc.subject.keywordPlus | Charge loss | - |
dc.subject.keywordPlus | Competitive retentions | - |
dc.subject.keywordPlus | Control layers | - |
dc.subject.keywordPlus | Electron-beam evaporations | - |
dc.subject.keywordPlus | Flat-band voltage shifts | - |
dc.subject.keywordPlus | Gate voltages | - |
dc.subject.keywordPlus | Memory effects | - |
dc.subject.keywordPlus | Non volatile memory devices | - |
dc.subject.keywordPlus | Non-volatile memories | - |
dc.subject.keywordPlus | Non-volatile memory applications | - |
dc.subject.keywordPlus | Remote plasmas | - |
dc.subject.keywordPlus | Thermal-annealing | - |
dc.subject.keywordAuthor | electron beam deposition | - |
dc.subject.keywordAuthor | hafnium compounds | - |
dc.subject.keywordAuthor | nanostructured materials | - |
dc.subject.keywordAuthor | platinum | - |
dc.subject.keywordAuthor | random-access storage | - |
dc.subject.keywordAuthor | rapid thermal annealing | - |
dc.subject.keywordAuthor | tunnelling | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3067834 | - |
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