Charging effect of In2O3 nano-particles embedded in polyimide layer for application as non-volatile nano-floating gate memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seon Pil | - |
dc.contributor.author | Lee, Tae Hee | - |
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Koo, Hyun-Mo | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.contributor.author | Kim, Young-Ho | - |
dc.date.accessioned | 2022-12-20T23:50:47Z | - |
dc.date.available | 2022-12-20T23:50:47Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-01 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177421 | - |
dc.description.abstract | The memory charging effect of the nano-floating gate capacitor containing the In2O3 nano-particles embedded in polyimide layer was characterized. Self-assembled In2O3 nano-particles were created by chemical reaction between the polymer precursor and indium film, and then the particles size and density were about 7 nm and 5.8 x 10(11) cm(-2), respectively. From capacitance-voltage hysteresis originated from electrons charging in the In2O3 nano-particles through tunneling oxide from p-type Si wafer, the flat-band voltage shift was obtained up to about 3.4 V, when the sweeping gate voltage was from -6 to 6 V. The endurance ability of this capacitor showed up to 2 x 10(5) cycles during the programming at 5 V for 0.2 ms and erasing at -5 V for 1.8 ms processes. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Charging effect of In2O3 nano-particles embedded in polyimide layer for application as non-volatile nano-floating gate memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.contributor.affiliatedAuthor | Kim, Young-Ho | - |
dc.identifier.doi | 10.1016/j.cap.2008.08.019 | - |
dc.identifier.scopusid | 2-s2.0-55649112042 | - |
dc.identifier.wosid | 000262500500013 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.9, no.1, pp.S43 - S46 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | S43 | - |
dc.citation.endPage | S46 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001326240 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordAuthor | Nano-particle | - |
dc.subject.keywordAuthor | Nano-floating gate memory | - |
dc.subject.keywordAuthor | In2O3 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1567173908001855?via%3Dihub | - |
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