Initial formation mechanisms of (Ga1-xMnx)N nanorods grown on Al2O3 (0001) substrates
DC Field | Value | Language |
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dc.contributor.author | Lee, Kyu-Hyung | - |
dc.contributor.author | Jeong Yong | - |
dc.contributor.author | Jeon, Hee Change | - |
dc.contributor.author | Kang, Taewon Wang | - |
dc.contributor.author | Kwon, Hye-Young | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-12-21T00:12:43Z | - |
dc.date.available | 2022-12-21T00:12:43Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-12 | - |
dc.identifier.issn | 0884-2914 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177612 | - |
dc.description.abstract | The (Ga1-xMnx)N nanorods were grown oil Al2O3 (0001) substrates by using rf-associated molecular beam epitaxy. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected-area diffraction pattern (SADP) results showed that the (Ga1-xMnx)N nanorods had (0001) preferential orientations. XRD patterns showed that the (Ga1-xMnx)N nanorods contained a small number of grains with different preferred orientations. High-resolution TEM (HRTEM) images showed that the (Ga1-xMnx)N nanorods consisted of different preferentially oriented grains. The initial formation mechanisms for the (Ga1-xMnx)N nanorods grown on Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | CAMBRIDGE UNIV PRESS | - |
dc.title | Initial formation mechanisms of (Ga1-xMnx)N nanorods grown on Al2O3 (0001) substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1557/JMR.2008.0408 | - |
dc.identifier.scopusid | 2-s2.0-58049197846 | - |
dc.identifier.wosid | 000261432200020 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS RESEARCH, v.23, no.12, pp.3275 - 3280 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS RESEARCH | - |
dc.citation.title | JOURNAL OF MATERIALS RESEARCH | - |
dc.citation.volume | 23 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 3275 | - |
dc.citation.endPage | 3280 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | ELECTRON-SPIN | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.identifier.url | https://link.springer.com/article/10.1557/JMR.2008.0408 | - |
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