Electrical Properties of Delta-Doped Silicon-Nanowire Field-Effect Transistors

Abstract

We report on complementary delta-doping (delta-doping) and the electrical transport properties in single-crystal silicon nanowires (SiNWs) synthesized by using chemical vapor deposition via a vapor-liquid-solid growth process. Self-limited delta-doping layers were formed on intrinsic SiNW surfaces with either phosphine (PH3) or diborane (B2H6) molecular precursors and were then capped with intrinsic Si shell layers. Gate-dependent transport measurements showed that these delta-doped SiNWs behaved as either p-type or n-type channels in field-effect transistors (FETs) with transconductances of 150 nS and 130 nS and carrier mobilities of 45 cm(2)/Vs and 40 cm(2)/VS for p-type and n-type SiNW FETs, respectively.