Electrical Properties of Delta-Doped Silicon-Nanowire Field-Effect Transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Won Il | - |
dc.date.accessioned | 2022-12-21T01:06:52Z | - |
dc.date.available | 2022-12-21T01:06:52Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-10 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177833 | - |
dc.description.abstract | We report on complementary delta-doping (delta-doping) and the electrical transport properties in single-crystal silicon nanowires (SiNWs) synthesized by using chemical vapor deposition via a vapor-liquid-solid growth process. Self-limited delta-doping layers were formed on intrinsic SiNW surfaces with either phosphine (PH3) or diborane (B2H6) molecular precursors and were then capped with intrinsic Si shell layers. Gate-dependent transport measurements showed that these delta-doped SiNWs behaved as either p-type or n-type channels in field-effect transistors (FETs) with transconductances of 150 nS and 130 nS and carrier mobilities of 45 cm(2)/Vs and 40 cm(2)/VS for p-type and n-type SiNW FETs, respectively. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Electrical Properties of Delta-Doped Silicon-Nanowire Field-Effect Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Won Il | - |
dc.identifier.doi | 10.3938/jkps.53.1759 | - |
dc.identifier.scopusid | 2-s2.0-55949109961 | - |
dc.identifier.wosid | 000260100400001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.4, pp.L1759 - L1763 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 53 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | L1759 | - |
dc.citation.endPage | L1763 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001287118 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordAuthor | Silicon nanowires | - |
dc.subject.keywordAuthor | Delta-doping | - |
dc.subject.keywordAuthor | Field-effect transistors | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=53&number=4&spage=1759&year=2008 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.