Growth of nitrogen doped ZnO films through a nitrogen diffusion process from WN films formed by a cosputtering technique
DC Field | Value | Language |
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dc.contributor.author | Lee, Jonghyun | - |
dc.contributor.author | Ha, Jaehwan | - |
dc.contributor.author | Hong, Jinpyo | - |
dc.contributor.author | Cha, Seungnam | - |
dc.contributor.author | Paik, Ungyu | - |
dc.date.accessioned | 2022-12-21T01:29:37Z | - |
dc.date.available | 2022-12-21T01:29:37Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-09 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177973 | - |
dc.description.abstract | High quality nitrogen doped ZnO films were fabricated on glass substrates by allowing nitrogen atoms from a pregrown tungsten nitride (WN) to be activated and diffused into a pure ZnO film during an in situ post-thermal annealing process. The N doped ZnO film exhibited reproducible electrical properties including a Hall concentration of 3.69x10(18) cm(-3), a mobility of 1.35 cm(2)/V-s , and a resistivity of 10 Omega cm at room temperature, along with corresponding structural results. Further investigation using ZnO p-n homojunctions, which displayed good I-V characteristics with a turn-on voltage of about 3 V, demonstrated that the p-type ZnO growth process can simply form p-type ZnO:N. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Growth of nitrogen doped ZnO films through a nitrogen diffusion process from WN films formed by a cosputtering technique | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jinpyo | - |
dc.contributor.affiliatedAuthor | Paik, Ungyu | - |
dc.identifier.doi | 10.1116/1.2968706 | - |
dc.identifier.scopusid | 2-s2.0-53349091670 | - |
dc.identifier.wosid | 000259874900011 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.26, no.5, pp.1696 - 1699 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 26 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1696 | - |
dc.citation.endPage | 1699 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | P-TYPE ZNO | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.identifier.url | https://avs.scitation.org/doi/full/10.1116/1.2968706 | - |
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