Magnetic properties of Mn+-implanted and annealed Si1-xGex thin films grown on p-Si(100) substrates

Abstract

Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates were formed with the goal of producing (Si1-xGex)(1-y)Mn-y with a high ferromagnetic transition temperature (T-c). The double-crystal X-ray rocking Curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si1-xGex thin films were single crystalline. The magnetization Curves as functions of the magnetic field clearly showed that ferromagnetism existed in the Mill-implanted and annealed Si1-xGex thin films, and the magnetization Curves as functions of the temperature showed that the T-c value was above 300 K. These results indicate that the formed (Si1-xGex)(1-y)Mn-y thin films hold promise for potential applications in Si-based spintronic devices operating at room temperature.