Comparison of operating mechanisms for the poly(N-vinylcarbazole) based non-volatile memory devices
DC Field | Value | Language |
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dc.contributor.author | Choi, Jin-Sik | - |
dc.contributor.author | Suh, Dong Hack | - |
dc.date.accessioned | 2022-12-21T01:52:50Z | - |
dc.date.available | 2022-12-21T01:52:50Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2008-07 | - |
dc.identifier.issn | 1022-1360 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178143 | - |
dc.description.abstract | The organic non-volatile memory devices (NVMs) based on poly(N-vinylcarbazole) (PVK) with the different structures and compositions were fabricated and evaluated. The resistance states in the devices were controlled by the external electric field and exhibited the distinctive properties; the device with a single PVK layer was a write-once read-many-times memory by the field induced filament as a conduction path and its memory properties depended on the PVK thickness, the PVK/ Al/PVK structured device was operated by a space charge limited current model and was sensitive to preparing condition of the internal Al layer, and the device performances with the PVK based charge transfer complex depended on the composition of the CT materials and the surface condition of the bottom electrode. Copyright ? 2008 WILEY-VCH Verlag GmbH & Co. KGaA. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | John Wiley & Sons Ltd. | - |
dc.title | Comparison of operating mechanisms for the poly(N-vinylcarbazole) based non-volatile memory devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Suh, Dong Hack | - |
dc.identifier.doi | 10.1002/masy.200850817 | - |
dc.identifier.scopusid | 2-s2.0-54949140769 | - |
dc.identifier.bibliographicCitation | Macromolecular Symposia, v.268, no.1, pp.81 - 85 | - |
dc.relation.isPartOf | Macromolecular Symposia | - |
dc.citation.title | Macromolecular Symposia | - |
dc.citation.volume | 268 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 81 | - |
dc.citation.endPage | 85 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | ABS resins | - |
dc.subject.keywordPlus | Charge transfer | - |
dc.subject.keywordPlus | Chemical analysis | - |
dc.subject.keywordPlus | Electric fields | - |
dc.subject.keywordPlus | Filaments (lamp) | - |
dc.subject.keywordPlus | Ion exchange | - |
dc.subject.keywordPlus | Mass transfer | - |
dc.subject.keywordPlus | Materials properties | - |
dc.subject.keywordPlus | Thick films | - |
dc.subject.keywordPlus | Al layers | - |
dc.subject.keywordPlus | Bottom electrodes | - |
dc.subject.keywordPlus | Charge transfer complexes | - |
dc.subject.keywordPlus | Conduction paths | - |
dc.subject.keywordPlus | Device performances | - |
dc.subject.keywordPlus | External electric fields | - |
dc.subject.keywordPlus | Field induced | - |
dc.subject.keywordPlus | Filament | - |
dc.subject.keywordPlus | Memory properties | - |
dc.subject.keywordPlus | Operating mechanisms | - |
dc.subject.keywordPlus | Organic | - |
dc.subject.keywordPlus | Organic non-volatile memory devices | - |
dc.subject.keywordPlus | Resistance states | - |
dc.subject.keywordPlus | Space charge limited current | - |
dc.subject.keywordPlus | Space charge limited currents | - |
dc.subject.keywordPlus | Surface conditions | - |
dc.subject.keywordPlus | Vinylcarbazole | - |
dc.subject.keywordPlus | Volatile memories | - |
dc.subject.keywordPlus | Data storage equipment | - |
dc.subject.keywordAuthor | Charge transfer | - |
dc.subject.keywordAuthor | Filament | - |
dc.subject.keywordAuthor | Organic non-volatile memory devices | - |
dc.subject.keywordAuthor | Space charge limited current | - |
dc.subject.keywordAuthor | Thin film | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/masy.200850817 | - |
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