Electrical characterization of ZnO nano-particles embedded in a polyimide for application as a nano-floating gate memory
DC Field | Value | Language |
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dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Kim, Seon Pil | - |
dc.contributor.author | Lee, Tae Hee | - |
dc.contributor.author | Kim, Eun Eyu | - |
dc.contributor.author | Koo, Hyun-Mo | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.contributor.author | Kim, Young-Ho | - |
dc.date.accessioned | 2022-12-21T02:01:28Z | - |
dc.date.available | 2022-12-21T02:01:28Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-07 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178182 | - |
dc.description.abstract | Nano-floating gate memory (NFGM) devices with ZnO nano-particles embedded in polyimide insulators were fabricated. The ZnO nano-particles were created by chemical reactions between polyamic acid and a zinc thin film. The size and the density of the ZnO nano-particles were about 10 nm and 2 x 10(11) cm(-2), respectively. The threshold voltage shift (Delta V-T) of the NFGM with ZnO nano-particles was about 2.35 V at the initial stage of the programming and the erasing operations. The subthreshold characteristics and the output current characteristics show that the NFGM with ZnO nano-particles embedded in polyimide has possibility for high-performance nonvolatile memory device applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Electrical characterization of ZnO nano-particles embedded in a polyimide for application as a nano-floating gate memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Young-Ho | - |
dc.identifier.doi | 10.3938/jkps.53.327 | - |
dc.identifier.scopusid | 2-s2.0-49649122338 | - |
dc.identifier.wosid | 000257664700070 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.327 - 330 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 53 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 327 | - |
dc.citation.endPage | 330 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001464092 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | POLYMERIC MATRIX | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | nano-floating gate memory | - |
dc.subject.keywordAuthor | non-volatile | - |
dc.subject.keywordAuthor | polyimide gate insulator | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=53&number=1&spage=327&year=2008 | - |
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