Dependence of the stored charges and tunneling voltages on the tunneling SiO2 thickness for Si nanoparticles embedded in a SiO2 layer
DC Field | Value | Language |
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dc.contributor.author | Oh, Do-Hyun | - |
dc.contributor.author | Lee, Soojin | - |
dc.contributor.author | Cho, Woon-Jo | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-12-21T02:02:24Z | - |
dc.date.available | 2022-12-21T02:02:24Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-07 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178191 | - |
dc.description.abstract | Dependence of the stored charges and the tunneling voltages on the tunneling SiO2 thickness for Si nanoparticles embedded in a SiO2 layer formed by the sonochemical method was investigated by using electrostatic force microscopy (EFM) measurements. Bright-field transmission electron microscopy images showed that Si nanoparticles were embedded in a SiO2 layer. EFM images for the Si nanoparticles embedded in a SiO2 layer under applied bias voltages showed that the localized charges remained in the Si nanoparticles embedded in. a SiO2 layer. The stored charge in the Si nanoparticles embedded in a SiO2 layer increased with a decrease in the tunneling SiO2 thickness. While the threshold tunneling voltage increased with an increase in the tunneling oxide thickness, the mean amplitude of the tunneling voltage increased with a decrease in the thickness of the tunneling SiO2 layer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Dependence of the stored charges and tunneling voltages on the tunneling SiO2 thickness for Si nanoparticles embedded in a SiO2 layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2007.12.068 | - |
dc.identifier.scopusid | 2-s2.0-44749092966 | - |
dc.identifier.wosid | 000257556700007 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.310, no.14, pp.3290 - 3293 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 310 | - |
dc.citation.number | 14 | - |
dc.citation.startPage | 3290 | - |
dc.citation.endPage | 3293 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON NANOPARTICLES | - |
dc.subject.keywordPlus | FORCE MICROSCOPY | - |
dc.subject.keywordPlus | RETENTION-TIME | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | INJECTION | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordAuthor | nanostructures | - |
dc.subject.keywordAuthor | nanomaterials | - |
dc.subject.keywordAuthor | semiconducting silicon | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0022024808003035?via%3Dihub | - |
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