Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Effects of UV/ozone treatment of a polymer dielectric surface on the properties of pentacene thin films for organic transistors

Full metadata record
DC Field Value Language
dc.contributor.authorHan, Seung Jin-
dc.contributor.authorKim, Jae-Hoon-
dc.contributor.authorKim, Jeong Won-
dc.contributor.authorMin, Chang-Ki-
dc.contributor.authorHong, Sa-Hwan-
dc.contributor.authorKim, Dal-Hyun-
dc.contributor.authorBaek, Kyu-Ha-
dc.contributor.authorKim, Gi-Heon-
dc.contributor.authorDo, Lee-Mi-
dc.contributor.authorPark, Y.-
dc.date.accessioned2022-12-21T02:02:30Z-
dc.date.available2022-12-21T02:02:30Z-
dc.date.created2022-08-26-
dc.date.issued2008-07-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178192-
dc.description.abstractUltraviolet photoelectron spectroscopy and atomic force microscopy (AFM) were used to investigate the energy level alignment and growth morphology of pentacene (Pn) films deposited on a PMMA derivative-based dielectric surface with and without ultraviolet/ozone treatment. The treated surface exhibited higher offset values for the highest occupied molecular orbital levels between Pn and the polymer, which would result in higher threshold voltages for the device. However, aligned vacuum levels of the treated surface and the Pn at the interface were observed, suggesting that the dipole field would be reduced in the Pn film on the treated surface. The hydrophilic nature of the treated surface, observed by water contact angle measurement, allowed for a larger grain size of the Pn film, as confirmed by the AFM measurements, which will also favorably contribute to device mobility.-
dc.language영어-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.titleEffects of UV/ozone treatment of a polymer dielectric surface on the properties of pentacene thin films for organic transistors-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Jae-Hoon-
dc.identifier.doi10.1063/1.2951905-
dc.identifier.scopusid2-s2.0-47749137808-
dc.identifier.wosid000257766500072-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.104, no.1, pp.1 - 4-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume104-
dc.citation.number1-
dc.citation.startPage1-
dc.citation.endPage4-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusVACUUM-LEVEL ALIGNMENT-
dc.subject.keywordPlusINTERFACE FORMATION-
dc.subject.keywordPlusGATE INSULATORS-
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.2951905-
Files in This Item
Go to Link
Appears in
Collections
서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Kim, Jae Hoon photo

Kim, Jae Hoon
COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
Read more

Altmetrics

Total Views & Downloads

BROWSE