Effects of UV/ozone treatment of a polymer dielectric surface on the properties of pentacene thin films for organic transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Seung Jin | - |
dc.contributor.author | Kim, Jae-Hoon | - |
dc.contributor.author | Kim, Jeong Won | - |
dc.contributor.author | Min, Chang-Ki | - |
dc.contributor.author | Hong, Sa-Hwan | - |
dc.contributor.author | Kim, Dal-Hyun | - |
dc.contributor.author | Baek, Kyu-Ha | - |
dc.contributor.author | Kim, Gi-Heon | - |
dc.contributor.author | Do, Lee-Mi | - |
dc.contributor.author | Park, Y. | - |
dc.date.accessioned | 2022-12-21T02:02:30Z | - |
dc.date.available | 2022-12-21T02:02:30Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-07 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178192 | - |
dc.description.abstract | Ultraviolet photoelectron spectroscopy and atomic force microscopy (AFM) were used to investigate the energy level alignment and growth morphology of pentacene (Pn) films deposited on a PMMA derivative-based dielectric surface with and without ultraviolet/ozone treatment. The treated surface exhibited higher offset values for the highest occupied molecular orbital levels between Pn and the polymer, which would result in higher threshold voltages for the device. However, aligned vacuum levels of the treated surface and the Pn at the interface were observed, suggesting that the dipole field would be reduced in the Pn film on the treated surface. The hydrophilic nature of the treated surface, observed by water contact angle measurement, allowed for a larger grain size of the Pn film, as confirmed by the AFM measurements, which will also favorably contribute to device mobility. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Effects of UV/ozone treatment of a polymer dielectric surface on the properties of pentacene thin films for organic transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jae-Hoon | - |
dc.identifier.doi | 10.1063/1.2951905 | - |
dc.identifier.scopusid | 2-s2.0-47749137808 | - |
dc.identifier.wosid | 000257766500072 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.104, no.1, pp.1 - 4 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 104 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | VACUUM-LEVEL ALIGNMENT | - |
dc.subject.keywordPlus | INTERFACE FORMATION | - |
dc.subject.keywordPlus | GATE INSULATORS | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2951905 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.