Microstructural properties and atomic arrangements of GaN nanorods grown on Si (111) substrates by using hydride vapor phase epitaxy
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Ki-Hyoung | - |
dc.contributor.author | Kwon, Yang-Hae | - |
dc.contributor.author | Ryu, Sung Yoon | - |
dc.contributor.author | Kang, Tae Won | - |
dc.contributor.author | Jung, Jun Ho | - |
dc.contributor.author | Lee, Dea Uk | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-12-21T02:51:55Z | - |
dc.date.available | 2022-12-21T02:51:55Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-06 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178564 | - |
dc.description.abstract | X-ray diffraction (XRD) patterns, field-emission scanning electron microscopy (FESEM) images, transmission electron microscopy (TEM) images, and selected area electron diffraction pattern (SADP) images showed that one-dimensional GaN nanorods with c-axis-oriented single-crystalline wurzite structures were grown on Si (111) substrates by using improved hydride vapor phase epitaxy. The high-resolution TEM (HRTEM) images showed that the crystallized GaN nanorods contained very few defects. The atomic arrangements for the GaN nanorods grown on the Si (111) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Microstructural properties and atomic arrangements of GaN nanorods grown on Si (111) substrates by using hydride vapor phase epitaxy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2008.03.011 | - |
dc.identifier.scopusid | 2-s2.0-44149128629 | - |
dc.identifier.wosid | 000257006800005 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.310, no.12, pp.2977 - 2980 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 310 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 2977 | - |
dc.citation.endPage | 2980 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordAuthor | nanostructures | - |
dc.subject.keywordAuthor | vapor phase epitaxy | - |
dc.subject.keywordAuthor | nanomaterials | - |
dc.subject.keywordAuthor | semiconducting III-V materials | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0022024808002327?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.