Electrical and optical properties of p-type InMnP : Zn for nano-spintronics

Abstract

We studied the electrical and optical properties of defect states and Mn-related clusters of p-type InMnP:Zn samples annealed at 450 and 600 degrees C by capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS) and photoluminescence (PL) measurements. Mn ion implantation on InP:Zn to obtain the ferromagnetic property can also generate various defects. We were able to find seven different DLTS signals named H2, H3, H4, H6, H8, H10, and E2. In these signals, the origins of H6 and H8 signals appear to be a Mn-state and Mn-related cluster and their activation energies are 0.32 and 0.72 eV, respectively. Finally, we confirmed that the ferromagnetic properties of InMnP:Zn are affected by this Mn-related level and the crystallinity of base semiconductor material.