Characteristics of hydrogen co-doped ZnO: Al thin films

Abstract

ZnO films co-doped with H and Al (HAZO) were prepared by sputtering ZnO targets containing 1 wt% Al2O3 on Corning glass at a substrate temperature of 150 degrees C with Ar and H-2/Ar gas mixtures. The effects of hydrogen addition to Al-doped ZnO (AZO) films with low Al content on the electrical, the optical and the structural properties of the as-grown films as well as the vacuum-and air-annealed films were examined. Secondary ion mass spectroscopy analysis showed that the hydrogen concentration increased with increasing H-2 in sputter gas. For the as-deposited films, the free carrier number increased with increasing H-2. The Hall mobility increased at low hydrogen content, reaching a maximum before decreasing with a further increase of H2 content in sputter gas. Annealing at 300 degrees C resulted in the removal of hydrogen, causing a decrease in the carrier concentration. It was shown that hydrogen might exist as single isolated interstitial hydrogen bound with oxygen, thereby acting like an anionic dopant. Also, it was shown that the addition of hydrogen to ZnO films doped with low metallic dopant concentration could yield transparent conducting films with very low absorption loss as well as with proper electrical properties, which is suitable for thin film solar cell applications.