Potential profiles and current hysteresis mechanisms in organic memory devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Jae Hun | - |
dc.contributor.author | You, Joo Hyung | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-12-21T03:36:09Z | - |
dc.date.available | 2022-12-21T03:36:09Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-04 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178773 | - |
dc.description.abstract | The potential profile and the current bistability of organic memory devices consisting of a single layer were calculated by using a one-dimensional drift-diffusion model taking into account a field-dependent mobility model and a single-level trap model. The appearance of a current bistability in the organic memory device was attributed to electrons trapped near the heterointerface. The increase in the hole mobility of the organic memory devices was attributed to an enhancement of the current density and the writing voltage significantly affected the magnitude of the current bistability. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Potential profiles and current hysteresis mechanisms in organic memory devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.3938/jkps.52.1264 | - |
dc.identifier.scopusid | 2-s2.0-43149089369 | - |
dc.identifier.wosid | 000255004700018 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.52, no.4, pp.1264 - 1267 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 52 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1264 | - |
dc.citation.endPage | 1267 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001237136 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | EFFICIENCIES | - |
dc.subject.keywordPlus | STATE | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordAuthor | organic memory device | - |
dc.subject.keywordAuthor | potential profile | - |
dc.subject.keywordAuthor | current hysteresis | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=52&number=9(4)&spage=1264&year=2008 | - |
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