Potential profiles and current hysteresis mechanisms in organic memory devices

Abstract

The potential profile and the current bistability of organic memory devices consisting of a single layer were calculated by using a one-dimensional drift-diffusion model taking into account a field-dependent mobility model and a single-level trap model. The appearance of a current bistability in the organic memory device was attributed to electrons trapped near the heterointerface. The increase in the hole mobility of the organic memory devices was attributed to an enhancement of the current density and the writing voltage significantly affected the magnitude of the current bistability.