Effect of a buffer layer on microstructural evolution in ZnO/Si heterostructures
DC Field | Value | Language |
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dc.contributor.author | Kim, Jun Ho | - |
dc.contributor.author | Moon, Jin-Young | - |
dc.contributor.author | Lee, Herman Seong | - |
dc.contributor.author | Kong, Bo Hyun | - |
dc.contributor.author | Cho, Hyun-Kyong | - |
dc.contributor.author | Jung, Eun Soo | - |
dc.contributor.author | Kim, Hong Seung | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-12-21T03:36:58Z | - |
dc.date.available | 2022-12-21T03:36:58Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-04 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178779 | - |
dc.description.abstract | We have deposited ZnO thin films on Si(111) substrates with and without a low temperature-grown ZnO buffer layer by using radio-frequency (rf) magnetron sputtering. The microstructural properties of ZnO/Si heterostructures have been investigated by using X-ray diffraction (XRD), pole-figures and transmission electron microscopy (TEM) measurements. The results of XRD, pole figures and TEM showed that both ZnO thin films with and without an embedded buffer layer had highly c-axis preferred orientations. When low-temperature-grown ZnO was used as an embedded buffer layer, the crystal quality of the ZnO thin films was improved due to the reduced rotation of the c-axis, despite its smaller grain size. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Effect of a buffer layer on microstructural evolution in ZnO/Si heterostructures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.3938/jkps.52.1061 | - |
dc.identifier.scopusid | 2-s2.0-43149119989 | - |
dc.identifier.wosid | 000255004600015 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.52, no.4, pp.1061 - 1064 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 52 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1061 | - |
dc.citation.endPage | 1064 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001240990 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | LOW-TEMPERATURE GROWTH | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordPlus | MOCVD | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | buffer layer | - |
dc.subject.keywordAuthor | transmission electron microscopy | - |
dc.subject.keywordAuthor | microstructure | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=52&number=4&spage=1061&year=2008 | - |
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