Fabrication of low temperature polycrystalline silicon thin-film transistor nonvolatile memory devices for digital memory on glass applications
DC Field | Value | Language |
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dc.contributor.author | Koo, Hyun-Mo | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Kim, Seon Pil | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Jung, Jongwan | - |
dc.date.accessioned | 2022-12-21T03:39:45Z | - |
dc.date.available | 2022-12-21T03:39:45Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-04 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178804 | - |
dc.description.abstract | We fabricated the nano-floating gate memory (NFGM) devices on the polycrystalline silicon (poly-Si) films crystallized by excimer laser annealing (ELA) method for thin-film transistor liquid-crystal display (TFT-LCD) with a new integration technology called digital memory on glass (DMOG). The In2O3 nano-dots were formed in polyimide gate insulating layers at low temperature as the charge storages of nonvolatile memory for DMOG applications. The memory window of low temperature poly-Si TIFT nonvolatile memory with In2O3 nano-dots embedded in polyimide was larger than 3.2 V and the memory characteristics were considerably improved by 3% hydrogen diluted N-2 ambient annealing. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Fabrication of low temperature polycrystalline silicon thin-film transistor nonvolatile memory devices for digital memory on glass applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1143/JJAP.47.2728 | - |
dc.identifier.scopusid | 2-s2.0-54249092441 | - |
dc.identifier.wosid | 000255449100086 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.4, pp.2728 - 2732 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 47 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 2728 | - |
dc.citation.endPage | 2732 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | IN2O3 | - |
dc.subject.keywordPlus | Annealing | - |
dc.subject.keywordPlus | Digital arithmetic | - |
dc.subject.keywordPlus | Digital devices | - |
dc.subject.keywordPlus | Display devices | - |
dc.subject.keywordPlus | Excimer lasers | - |
dc.subject.keywordPlus | Gas lasers | - |
dc.subject.keywordPlus | Glass | - |
dc.subject.keywordPlus | Hydrogen | - |
dc.subject.keywordPlus | Insulation | - |
dc.subject.keywordPlus | Integration | - |
dc.subject.keywordPlus | Liquid crystal displays | - |
dc.subject.keywordPlus | Polyimides | - |
dc.subject.keywordPlus | Polymers | - |
dc.subject.keywordPlus | Polysilicon | - |
dc.subject.keywordPlus | Semiconducting organic compounds | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Thin film devices | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordAuthor | excimer laser annealing | - |
dc.subject.keywordAuthor | low temperature poly-Si TFT | - |
dc.subject.keywordAuthor | nonvolatile memory | - |
dc.subject.keywordAuthor | In2O3 metal nano-dots | - |
dc.subject.keywordAuthor | polyimide gate insulator | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.47.2728 | - |
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