Fabrication and gas sensing properties of vertically aligned Si nanowires
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mirzaei, Ali | - |
dc.contributor.author | Kang, Sung Yong | - |
dc.contributor.author | Choi, Sun-Woo | - |
dc.contributor.author | Kwon, Yong Jung | - |
dc.contributor.author | Choi, Myung Sik | - |
dc.contributor.author | Bang, Jae Hoon | - |
dc.contributor.author | Kim, Sang Sub | - |
dc.contributor.author | Kim, Hyoun Woo | - |
dc.date.accessioned | 2021-08-02T13:54:10Z | - |
dc.date.available | 2021-08-02T13:54:10Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-01 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17886 | - |
dc.description.abstract | In this study, a peculiar configuration for a gas sensor consisting of vertically aligned silicon nanowires (VA-Si NWs) synthesized by metal-assisted chemical etching (MACE) is reported. Si NWs were prepared via a facile MACE method and subsequent thermal annealing. Etching was performed by generation of silver nanoparticles (Ag NPs) and subsequent etching in HF/H2O2 aqueous solution; the growth conditions were optimized by changing the process parameters. Highly vertically oriented arrays of Si NWs with a straight-line morphology were obtained, and a top-top electrode configuration was applied. The VA-Si NW gas sensor showed good sensing performance, and the VA-Si NWs exhibited a remarkable response (R-g/R-a = 11.5 similar to 17.1) to H-2 gas (10-50 ppm) at 100 degrees C which was the optimal working temperature. The formation mechanism and gas sensing mechanism of VA-Si NWs are described. The obtained results can suggest new approaches to making inexpensive, versatile, and portable sensors based on Si NWs having a novel top-top electrode structure that are fully compatible with well-developed Si technologies. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Fabrication and gas sensing properties of vertically aligned Si nanowires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Hyoun Woo | - |
dc.identifier.doi | 10.1016/j.apsusc.2017.08.182 | - |
dc.identifier.scopusid | 2-s2.0-85028752714 | - |
dc.identifier.wosid | 000415219100025 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.427, pp.215 - 226 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 427 | - |
dc.citation.startPage | 215 | - |
dc.citation.endPage | 226 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | POROUS SILICON | - |
dc.subject.keywordPlus | ORDERED ARRAYS | - |
dc.subject.keywordPlus | SNO2 NANOWIRES | - |
dc.subject.keywordPlus | ZNO NANORODS | - |
dc.subject.keywordPlus | SENSOR | - |
dc.subject.keywordPlus | NO2 | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | COMPOSITE | - |
dc.subject.keywordPlus | MOLECULE | - |
dc.subject.keywordPlus | MICROSTRUCTURE | - |
dc.subject.keywordAuthor | Silicon | - |
dc.subject.keywordAuthor | Nanowires | - |
dc.subject.keywordAuthor | Chemical etching | - |
dc.subject.keywordAuthor | Gas sensors | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433217325588?via%3Dihub | - |
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