Field emission properties of single-walled carbon nanotube with amphoteric doping by encapsulation of TTF and TCNQ
DC Field | Value | Language |
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dc.contributor.author | Lee, Jungwoo | - |
dc.contributor.author | Lee, Wonjoo | - |
dc.contributor.author | Sim, Kijo | - |
dc.contributor.author | Han, Sung-hwan | - |
dc.contributor.author | Yi, Whikun | - |
dc.date.accessioned | 2022-12-21T03:56:37Z | - |
dc.date.available | 2022-12-21T03:56:37Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-03 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178898 | - |
dc.description.abstract | Field emission (FE) currents were measured for prinstine single-walled carbon nanotubes (SWCNTs), and after encapsulation of electron withdrawing and donating molecule, i.e., 7,7,8,8-tetracyano-p-quinodimethane (TCNQ) and tetrathiafulvalene (TTF). X-ray photoelectron spectrometer, infrared, and Raman spectrometer were used to confirm encapsulation. TCNQ-doped SWCNTs (TCNQ-SWCNT) enhanced, and TTF-doped SWCNTs (TTF-SWCNT) decreased FE properties compared with pristine SWCNTs. The turn-on field of the pristine SWCNTs, TCNQ-SWCNT, and TTF-SWCNT were calculated to be 2.5, 2.3, and 3.2 V/mu m, respectively, and the maximum currents were obtained, in turn, 180, 329, and 21 mu A/cm(2) at the electric field of 3.6 V/mu m. To explain the FE properties, the work function of doped SWCNTs were calculated from Fowler-Nordheim equation, and also the resistivity of three samples was measured by four-point probe method and compared with each other. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Field emission properties of single-walled carbon nanotube with amphoteric doping by encapsulation of TTF and TCNQ | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yi, Whikun | - |
dc.identifier.doi | 10.1116/1.2870223 | - |
dc.identifier.scopusid | 2-s2.0-41549100538 | - |
dc.identifier.wosid | 000254600600070 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.26, no.2, pp.847 - 850 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 26 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 847 | - |
dc.citation.endPage | 850 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRONIC-PROPERTIES | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | SENSITIVITY | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | MONOLAYERS | - |
dc.subject.keywordPlus | MOLECULES | - |
dc.identifier.url | https://avs.scitation.org/doi/full/10.1116/1.2870223 | - |
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