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Field emission properties of single-walled carbon nanotube with amphoteric doping by encapsulation of TTF and TCNQ

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dc.contributor.authorLee, Jungwoo-
dc.contributor.authorLee, Wonjoo-
dc.contributor.authorSim, Kijo-
dc.contributor.authorHan, Sung-hwan-
dc.contributor.authorYi, Whikun-
dc.date.accessioned2022-12-21T03:56:37Z-
dc.date.available2022-12-21T03:56:37Z-
dc.date.created2022-08-26-
dc.date.issued2008-03-
dc.identifier.issn1071-1023-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178898-
dc.description.abstractField emission (FE) currents were measured for prinstine single-walled carbon nanotubes (SWCNTs), and after encapsulation of electron withdrawing and donating molecule, i.e., 7,7,8,8-tetracyano-p-quinodimethane (TCNQ) and tetrathiafulvalene (TTF). X-ray photoelectron spectrometer, infrared, and Raman spectrometer were used to confirm encapsulation. TCNQ-doped SWCNTs (TCNQ-SWCNT) enhanced, and TTF-doped SWCNTs (TTF-SWCNT) decreased FE properties compared with pristine SWCNTs. The turn-on field of the pristine SWCNTs, TCNQ-SWCNT, and TTF-SWCNT were calculated to be 2.5, 2.3, and 3.2 V/mu m, respectively, and the maximum currents were obtained, in turn, 180, 329, and 21 mu A/cm(2) at the electric field of 3.6 V/mu m. To explain the FE properties, the work function of doped SWCNTs were calculated from Fowler-Nordheim equation, and also the resistivity of three samples was measured by four-point probe method and compared with each other.-
dc.language영어-
dc.language.isoen-
dc.publisherA V S AMER INST PHYSICS-
dc.titleField emission properties of single-walled carbon nanotube with amphoteric doping by encapsulation of TTF and TCNQ-
dc.typeArticle-
dc.contributor.affiliatedAuthorYi, Whikun-
dc.identifier.doi10.1116/1.2870223-
dc.identifier.scopusid2-s2.0-41549100538-
dc.identifier.wosid000254600600070-
dc.identifier.bibliographicCitationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.26, no.2, pp.847 - 850-
dc.relation.isPartOfJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B-
dc.citation.titleJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B-
dc.citation.volume26-
dc.citation.number2-
dc.citation.startPage847-
dc.citation.endPage850-
dc.type.rimsART-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusELECTRONIC-PROPERTIES-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusSPECTROSCOPY-
dc.subject.keywordPlusSENSITIVITY-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusMONOLAYERS-
dc.subject.keywordPlusMOLECULES-
dc.identifier.urlhttps://avs.scitation.org/doi/full/10.1116/1.2870223-
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