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Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer

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dc.contributor.authorSon, Dong-Ick-
dc.contributor.authorKim, Ji-Hwan-
dc.contributor.authorPark, Dong-Hee-
dc.contributor.authorChoi, Won Kook-
dc.contributor.authorLi, Fushan-
dc.contributor.authorHam, Jung Hun-
dc.contributor.authorKim, Tae Whan-
dc.date.accessioned2022-12-21T04:36:17Z-
dc.date.available2022-12-21T04:36:17Z-
dc.date.created2022-08-26-
dc.date.issued2008-02-
dc.identifier.issn0957-4484-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179025-
dc.description.abstractThe bistable effects of CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole (PVK) polymer layer by using flexible poly-vinylidene difluoride (PVDF) and polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that CdSe/ZnS nanoparticles were formed inside the PVK polymer layer. Current-voltage (I-V) measurement on the Al/[CdSe/ZnS nanoparticles + PVK]/ITO/PVDF and Al/[CdSe/ZnS nanoparticles + PVK]/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing and emission of charges in the electronic states of the CdSe nanoparticles. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated by embedding inorganic CdSe/ZnS nanoparticles in a conducting polymer matrix on flexible substrates are prospects for potential applications in flexible nonvolatile flash memory devices.-
dc.language영어-
dc.language.isoen-
dc.publisherIOP PUBLISHING LTD-
dc.titleNonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Tae Whan-
dc.identifier.doi10.1088/0957-4484/19/05/055204-
dc.identifier.scopusid2-s2.0-38348998667-
dc.identifier.wosid000252967100004-
dc.identifier.bibliographicCitationNANOTECHNOLOGY, v.19, no.5, pp.1 - 5-
dc.relation.isPartOfNANOTECHNOLOGY-
dc.citation.titleNANOTECHNOLOGY-
dc.citation.volume19-
dc.citation.number5-
dc.citation.startPage1-
dc.citation.endPage5-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusMEMORY CELLS-
dc.subject.keywordPlusQUANTUM-DOT-
dc.subject.keywordPlusNANOCRYSTALS-
dc.subject.keywordPlusBISTABILITY-
dc.subject.keywordPlusMECHANISM-
dc.subject.keywordPlusSYSTEM-
dc.identifier.urlhttps://iopscience.iop.org/article/10.1088/0957-4484/19/05/055204-
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