The appearance of clear ferromagnetism for p-type InMnP : Zn implanted with Mn of 1 at.%
DC Field | Value | Language |
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dc.contributor.author | Shon, Yoon | - |
dc.contributor.author | Jeon, Hee Change | - |
dc.contributor.author | Lee, Sejoon | - |
dc.contributor.author | Park, Chang-Soo | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Fu, De Jun | - |
dc.contributor.author | Fan, Xiangjun | - |
dc.contributor.author | Yoon, Chong S. | - |
dc.contributor.author | Lee, Jeoung Ju | - |
dc.date.accessioned | 2022-12-21T04:55:19Z | - |
dc.date.available | 2022-12-21T04:55:19Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-01 | - |
dc.identifier.issn | 0921-5107 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179118 | - |
dc.description.abstract | The p-type InP:Zn was prepared by the liquid encapsulated Czochralski method and subsequently implanted with Mn+ of 5 x 10, 5 cm(-2). The results of energy dispersive X-ray displayed that the concentration of incorporated Mn into InP:Zn is 1 at.%. The cross-sectional transmission electron microscopy showed that the thickness of Mn-incorporated layer was similar to 300 nm. For photoluminescence measurements, the Mn-related optical transitions caused by incorporation of Mn were broadly observed at the energy region of 1.034, 0.985, and 0.958 eV. The samples clearly showed ferromagnetic hysteresis loops at 10 K, and the ferromagnetic behavior was observed to persist up to 360 K. Thus, the Curie temperature of Mn+-implanted InMnP:Zn (Mn similar to 1 at.%) is expected to be above 300 K. It is found that a room-temperature-ferromagnetism of InMnP:Zn can be formed by ion implantation of a relatively low concentration of Mn (1 at.%). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | The appearance of clear ferromagnetism for p-type InMnP : Zn implanted with Mn of 1 at.% | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.contributor.affiliatedAuthor | Yoon, Chong S. | - |
dc.identifier.doi | 10.1016/j.mseb.2007.07.093 | - |
dc.identifier.scopusid | 2-s2.0-37349044587 | - |
dc.identifier.wosid | 000252668300049 | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.146, no.1-3, pp.220 - 224 | - |
dc.relation.isPartOf | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.citation.title | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.citation.volume | 146 | - |
dc.citation.number | 1-3 | - |
dc.citation.startPage | 220 | - |
dc.citation.endPage | 224 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | NEUTRAL MANGANESE ACCEPTOR | - |
dc.subject.keywordPlus | MAGNETIC-PROPERTIES | - |
dc.subject.keywordPlus | MEDIATED FERROMAGNETISM | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | GAN EPILAYERS | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordPlus | ALLOYS | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | Mn+ ion implantation | - |
dc.subject.keywordAuthor | InMnP : Zn | - |
dc.subject.keywordAuthor | ferromagnetic semiconductor | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0921510707003881?via%3Dihub | - |
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