The study of structural, optical, and magnetic properties of undoped and p-type GaN implanted with Mn+ (10 at.%)

Abstract

GaMnN and GaMnN:Mg layers were prepared using implantation of 10at.% Mn ions into undoped GaN and p-type GaN:Mg epilayers, respectively. For PL measurements, the samples clearly showed Mn-related transitions indicating a good activation of Mn ions in the host epilayers. Both samples revealed that two precipitate phases of Ga5.2Mn and Mn3Ga coexist with the main crystalline phase of GaMnN. A clear hysteresis loop indicative of obvious ferromagnetism was observed for both samples, and the transition of ferromagnetism showed two kinds of behaviors; i.e., a rapid transition from GaMnN DMS phase at the lower temperature region (75-100 K) and a released transition from Ga5.2Mn and Mn3Ga phases at the higher temperature region (above 300 K). The transition point related to GaMnN DMS phase for Mg-codoped GaMnN (similar to 100 K) was observed to be higher than undoped GaMnN (similar to 75 K). This result is considered as resulting from the increase of ferromagnetic interaction rates due to codoping of Mg acceptors.