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Electrical characterization of non volatile memory device with In2O3 nano-particles embedded in polyimide
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Dong Uk | - |
| dc.contributor.author | Kim, Seon Pil | - |
| dc.contributor.author | Kim, Jae Hoon | - |
| dc.contributor.author | Kim, Eun Kyu | - |
| dc.contributor.author | Koo, Hyun Mo | - |
| dc.contributor.author | Cho, Won Ju | - |
| dc.contributor.author | Kim, Young Ho | - |
| dc.date.accessioned | 2022-12-21T05:12:48Z | - |
| dc.date.available | 2022-12-21T05:12:48Z | - |
| dc.date.issued | 2007-12 | - |
| dc.identifier.issn | 0374-4884 | - |
| dc.identifier.issn | 1976-8524 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179253 | - |
| dc.description.abstract | We fabricated a nano-floating gate memory (NFGM) with In2O3 nano-particles embedded in polyimide insulators. Self-assembled In2O3 nano-particles were created by chemical reaction between polymer precursor and indium film. The particle size and density were about 7 nm and 6 X l0(ll) cm(-2), respectively. Electrical characterization of the NFGM with In2O3 nano-particles was performed, and the memory window was about 1.3 V at the initial status of writing and erasing operations. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | Electrical characterization of non volatile memory device with In2O3 nano-particles embedded in polyimide | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.wosid | 000252143900031 | - |
| dc.identifier.bibliographicCitation | Journal of the Korean Physical Society, v.51, pp S318 - S321 | - |
| dc.citation.title | Journal of the Korean Physical Society | - |
| dc.citation.volume | 51 | - |
| dc.citation.startPage | S318 | - |
| dc.citation.endPage | S321 | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.identifier.kciid | ART001226706 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
| dc.subject.keywordPlus | FABRICATION | - |
| dc.subject.keywordAuthor | In2O3 | - |
| dc.subject.keywordAuthor | nano-floating gate memory | - |
| dc.subject.keywordAuthor | nonvolatile | - |
| dc.subject.keywordAuthor | polyimide insulator | - |
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Related Researcher
- Kim, Jae Hoon
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)