Defect states of p-type InMnP : Zn implanted with Mn ion

Abstract

We studied defect states of Mn-implanted p-type InP:Zn samples annealed at 450, 550, and 600 degrees C by using C-V and deep level transient spectroscopy (DLTS) measurements. From these results, it was confirmed that ion implantation process make defects in the InP. Thermal annealing process could reduce the crystal defects and increase the crystallinity of the InMnP. We could find clear DLTS signal name as HL1, HL2, and HL3, and then their activation energies and cross-sections were obtained about 0.43,0.29, 0.65eV and 3.09 x 10(-13) cm(2), 1.23 x 10(-18) cm(2), 3.17 x 10(-13) cm(2), respectively. Among them, the origin of HL2 signal was considered to be a Mn-related level. Finally we confirmed that the ferromagnetic properties of InMnP:Zn are affected by this Mn-related levels and the sample crystallinity.