Growth of InAs quantum dots with a strain-reducing layer for 1.45 mu m emission by migration-enhanced epitaxy

Abstract

InAs self-assembled quantum-dot (QD) structures with In0.3Ga0.7As strain-reducing layers were successfully grown on GaAs substrates by migration-enhanced epitaxy. At room temperature, the photoluminescence (PL) peak wavelength of QDs appeared at similar to 1.3 mu m, which is applicable for fiber-optic communications. After introducing two additional periods of InAs/InGaAs supperlattice layers on the dots, the PL peak showed a further redshift, as well as a sharper full-width at half maximum (FWHM). Emission at a peak wavelength of 1.45 mu m with a FWHM of 30 meV was achieved for TnAs QDs on GaAs.