High-gain wideband CMOS low noise amplifier with two-stage cascode and simplified Chebyshev filter

Abstract

An ultra-wideband low-noise amplifier is proposed with operation up to 82 GHz The amplifier is fabficated with a 0.18-mu m CMOS process and adopts a two-stage cascode architecture and a simplified Chebyshev filter for high gain, wide band, input-impedance matching, and low noise. The gain of 19.2 dB and minimum noise figure of 3.3 dB are measured over 3.4 to 8.2 GHz while consuming 17.3 mW of power The Proposed UWB LNA achieves a measured power-gain bandwidth product of 399.4 GHz.