Macroscopic and microscopic charging effects of Si nanocrystals embedded in a SiO2 layer
DC Field | Value | Language |
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dc.contributor.author | Kim, Jae Ho | - |
dc.contributor.author | Oh, Do Hyun | - |
dc.contributor.author | Lee, Soo Jin | - |
dc.contributor.author | Lee, Kyu Hwan | - |
dc.contributor.author | Cho, Woon Jo | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Park, Young Ju | - |
dc.date.accessioned | 2022-12-21T06:19:05Z | - |
dc.date.available | 2022-12-21T06:19:05Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-10 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179524 | - |
dc.description.abstract | Capacitance-voltage (C-P) and electrostatic force microscopy (EFM) measurements on Si nanocrystals (Si-NCs) formed by using the sonochemical method were carried out to investigate the charging effects of the Si-NCs. Transmission electron microscopy images and atomic force microscopy images showed that the Si-NCs were created inside the SiO2 layer. The C-V curve and the EFM image showed that the Si-NCs embedded in the SiO2 layer experienced charging effects. The macroscopic surface charge density determined from the C-V curve was in reasonable agreement with the microscopic local value obtained from the EFM image. The present results indicate that the EFM technique might provide a promising method for investigating charging effects in various kinds of nanocrystals embedded in the insulating layer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Macroscopic and microscopic charging effects of Si nanocrystals embedded in a SiO2 layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2007.08.031 | - |
dc.identifier.scopusid | 2-s2.0-35348908926 | - |
dc.identifier.wosid | 000250991000008 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.308, no.2, pp.278 - 282 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 308 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 278 | - |
dc.citation.endPage | 282 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
dc.subject.keywordPlus | QUANTUM CONFINEMENT | - |
dc.subject.keywordPlus | DOTS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordAuthor | nanostructures | - |
dc.subject.keywordAuthor | nanomaterials | - |
dc.subject.keywordAuthor | semiconducting silicon | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0022024807007634?via%3Dihub | - |
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