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Macroscopic and microscopic charging effects of Si nanocrystals embedded in a SiO2 layer

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dc.contributor.authorKim, Jae Ho-
dc.contributor.authorOh, Do Hyun-
dc.contributor.authorLee, Soo Jin-
dc.contributor.authorLee, Kyu Hwan-
dc.contributor.authorCho, Woon Jo-
dc.contributor.authorKim, Tae Whan-
dc.contributor.authorPark, Young Ju-
dc.date.accessioned2022-12-21T06:19:05Z-
dc.date.available2022-12-21T06:19:05Z-
dc.date.created2022-08-26-
dc.date.issued2007-10-
dc.identifier.issn0022-0248-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179524-
dc.description.abstractCapacitance-voltage (C-P) and electrostatic force microscopy (EFM) measurements on Si nanocrystals (Si-NCs) formed by using the sonochemical method were carried out to investigate the charging effects of the Si-NCs. Transmission electron microscopy images and atomic force microscopy images showed that the Si-NCs were created inside the SiO2 layer. The C-V curve and the EFM image showed that the Si-NCs embedded in the SiO2 layer experienced charging effects. The macroscopic surface charge density determined from the C-V curve was in reasonable agreement with the microscopic local value obtained from the EFM image. The present results indicate that the EFM technique might provide a promising method for investigating charging effects in various kinds of nanocrystals embedded in the insulating layer.-
dc.language영어-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.titleMacroscopic and microscopic charging effects of Si nanocrystals embedded in a SiO2 layer-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Tae Whan-
dc.identifier.doi10.1016/j.jcrysgro.2007.08.031-
dc.identifier.scopusid2-s2.0-35348908926-
dc.identifier.wosid000250991000008-
dc.identifier.bibliographicCitationJOURNAL OF CRYSTAL GROWTH, v.308, no.2, pp.278 - 282-
dc.relation.isPartOfJOURNAL OF CRYSTAL GROWTH-
dc.citation.titleJOURNAL OF CRYSTAL GROWTH-
dc.citation.volume308-
dc.citation.number2-
dc.citation.startPage278-
dc.citation.endPage282-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaCrystallography-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryCrystallography-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusSILICON NANOCRYSTALS-
dc.subject.keywordPlusQUANTUM CONFINEMENT-
dc.subject.keywordPlusDOTS-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordAuthornanostructures-
dc.subject.keywordAuthornanomaterials-
dc.subject.keywordAuthorsemiconducting silicon-
dc.identifier.urlhttps://www.sciencedirect.com/science/article/pii/S0022024807007634?via%3Dihub-
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