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High temperature stability of bulk Ti3SiC2 materials in air
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Donghun | - |
| dc.contributor.author | Han, Jae-Ho | - |
| dc.contributor.author | Kim, Young Do | - |
| dc.contributor.author | Park, Sang-whang | - |
| dc.contributor.author | Lee, Dongbok | - |
| dc.date.accessioned | 2022-12-21T06:25:21Z | - |
| dc.date.available | 2022-12-21T06:25:21Z | - |
| dc.date.issued | 2007-09 | - |
| dc.identifier.issn | 0255-5476 | - |
| dc.identifier.issn | 1662-9752 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179584 | - |
| dc.description.abstract | The Ti3SiC2 materials were synthesized by hot pressing TiCx and Si powder mixtures. The matrix grains were lamellar, having a small amount of TiCx. The high-temperature stability was investigated by subjecting Ti3SiC2 to high-temperature oxidation up to 1200°C in air. Ti3SiC 2 began to oxidize appreciably above 850°C. The oxidation resulted in the formation of the oxide layer that consisted of TiO2 and SiO2. The scales formed were adherent. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Trans Tech Publications Ltd. | - |
| dc.title | High temperature stability of bulk Ti3SiC2 materials in air | - |
| dc.type | Article | - |
| dc.publisher.location | 스위스 | - |
| dc.identifier.doi | 10.4028/www.scientific.net/MSF.534-536.1037 | - |
| dc.identifier.scopusid | 2-s2.0-38349161585 | - |
| dc.identifier.bibliographicCitation | Materials Science Forum, v.534-536, no.PART 2, pp 1037 - 1040 | - |
| dc.citation.title | Materials Science Forum | - |
| dc.citation.volume | 534-536 | - |
| dc.citation.number | PART 2 | - |
| dc.citation.startPage | 1037 | - |
| dc.citation.endPage | 1040 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Chemical stability | - |
| dc.subject.keywordPlus | Hot pressing | - |
| dc.subject.keywordPlus | Oxidation | - |
| dc.subject.keywordPlus | Silicon carbide | - |
| dc.subject.keywordPlus | Thermodynamic stability | - |
| dc.subject.keywordPlus | Oxide layers | - |
| dc.subject.keywordPlus | Powder mixtures | - |
| dc.subject.keywordPlus | Ternary carbide | - |
| dc.subject.keywordPlus | Titanium compounds | - |
| dc.subject.keywordAuthor | Chemical stability | - |
| dc.subject.keywordAuthor | Oxidation | - |
| dc.subject.keywordAuthor | Ternary carbide | - |
| dc.subject.keywordAuthor | Ti3SiC2 | - |
| dc.identifier.url | https://www.scientific.net/MSF.534-536.1037 | - |
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