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First-principles study of the adsorption and reaction of 2,3-butanediol on Si(001)

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dc.contributor.authorLee, Jun Ho-
dc.contributor.authorCho, Jun Hyung-
dc.date.accessioned2022-12-21T06:34:53Z-
dc.date.available2022-12-21T06:34:53Z-
dc.date.created2022-08-26-
dc.date.issued2007-09-
dc.identifier.issn2469-9950-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179633-
dc.description.abstractThe adsorption and reaction of 2,3-butanediol on the Si(001) surface are investigated by first-principles density-functional calculations within the generalized-gradient approximation. We consider the two different reaction pathways forming adsorptions on top of a single dimer (termed the "on-top" structure) and across the ends of two adjacent dimers in the same dimer row (termed the "end-bridge" structure). For both reaction pathways, the O atom of the hydroxyl group initially bonds to the down Si atom of the buckled dimer and, subsequently, O-H dissociation takes place. However, the reaction of another hydroxyl group shows a drastic difference between the two reaction pathways. Along the former reaction pathway, it is difficult to form the second Si - O bond because of a repulsive interaction between an O lone pair and a single Si dangling bond, thereby prohibiting formation of the on-top structure. On the other hand, along the latter reaction pathway, an O lone pair of the hydroxyl group is attracted to the down Si atom of a neighboring dimer, proceeding to the formation of the end-bridge structure. These results provide an explanation for a recent scanning tunneling microscope observation that 2,3-butanediol occupies predominantly the end-bridge structure.-
dc.language영어-
dc.language.isoen-
dc.publisherAMER PHYSICAL SOC-
dc.titleFirst-principles study of the adsorption and reaction of 2,3-butanediol on Si(001)-
dc.typeArticle-
dc.contributor.affiliatedAuthorCho, Jun Hyung-
dc.identifier.doi10.1103/PhysRevB.76.125302-
dc.identifier.scopusid2-s2.0-34548775224-
dc.identifier.wosid000249786500039-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.76, no.12, pp.1 - 5-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume76-
dc.citation.number12-
dc.citation.startPage1-
dc.citation.endPage5-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusSELF-CONSISTENT-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusSI(100)-
dc.subject.keywordPlusPSEUDOPOTENTIALS-
dc.subject.keywordPlusSILICON(001)-
dc.identifier.urlhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.76.125302-
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