Characteristics of Ti-capped Co films deposited by a remote plasma ALD method using cyclopentadienylcobalt dicarbonyl
DC Field | Value | Language |
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dc.contributor.author | Lee, Keunwoo | - |
dc.contributor.author | Kim, Keunjun | - |
dc.contributor.author | Park, Taeyong | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.contributor.author | Lee, Youngjin | - |
dc.contributor.author | Kim, Jeongtae | - |
dc.contributor.author | Yeom, Seungjin | - |
dc.date.accessioned | 2022-12-21T06:55:57Z | - |
dc.date.available | 2022-12-21T06:55:57Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-08 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179757 | - |
dc.description.abstract | Co films were deposited by a remote plasma atomic layer deposition (RPALD) method using cyclopentadienylcobalt dicarbonyl [CpCo(CO)(2)] as the Co precursor with H-2 plasma. The impurity contents in the Co films were minimized under the optimized process conditions with H2 plasma using a process pressure range between 0.1 and 2 Torr and a plasma power of 300 W. The ALD process window of the Co films showed a saturated temperature range between 125 and 175 degrees C. The carbon and oxygen contents of as-deposited Co films were about 8 and 1 atom %, respectively. However, the carbon content in the Co films decreased from 8 to 4 atom % after in situ annealing at 400 degrees C. For in situ annealed Co films deposited on Si substrates, a polycrystalline CoSi2 phase was observed. The surface and interface morphologies of CoSi2/ Si were rough compared to Ti-capped CoSi2/ Si after ex situ annealing at 600 degrees C. In addition, CoSi was completely transformed to CoSi2 at 600 degrees C. However, in the in situ annealed Co films with Ti-capped layer, the diffraction peak of CoSi2(200) began to appear at 700 degrees C. The formation temperature of the Ti-capped CoSi2 phase was retarded by about 100 S C compared to the Co film without the Ti-capped layer. In addition, the surface and interface morphologies of the Ti-capped CoSi2 layer were smooth. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Characteristics of Ti-capped Co films deposited by a remote plasma ALD method using cyclopentadienylcobalt dicarbonyl | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1149/1.2769327 | - |
dc.identifier.scopusid | 2-s2.0-34548275582 | - |
dc.identifier.wosid | 000248984700072 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.10, pp.H899 - H903 | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 154 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | H899 | - |
dc.citation.endPage | H903 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | COSI2 FILM | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | COBALT | - |
dc.subject.keywordPlus | SILICIDES | - |
dc.subject.keywordPlus | CO-2(CO)(8) | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.2769327 | - |
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